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BH616UV1611BI55 Datasheet(PDF) 5 Page - Brilliance Semiconductor

Part # BH616UV1611BI55
Description  Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit
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Manufacturer  BSI [Brilliance Semiconductor]
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Logo BSI - Brilliance Semiconductor

BH616UV1611BI55 Datasheet(HTML) 5 Page - Brilliance Semiconductor

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BH616UV1611
R0201-BH616UV1611
Revision
1.3
Otc.
2006
5
n DATA RETENTION CHARACTERISTICS (T
A = -40
OC to +85OC)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP.
(1)
MAX.
UNITS
VDR
VCC for Data Retention
CE1≧VCC-0.2V or CE2≦0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
1.0
--
--
V
ICCDR
Data Retention Current
CE1≧VCC-0.2V or CE2≦0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
VCC=1.2V
--
1.5
15
uA
tCDR
Chip Deselect to Data
Retention Time
0
--
--
ns
tR
Operation Recovery Time
See Retention Waveform
tRC
(2)
--
--
ns
1. Typical characteristics are at TA=25
OC and not 100% tested.
2. tRC = Read Cycle Time.
n LOW V
CC DATA RETENTION WAVEFORM (1) (CE1 Controlled)
n LOW V
CC DATA RETENTION WAVEFORM (2) (CE2 Controlled)
n AC TEST CONDITIONS
(Test Load and Input/Output Reference)
Input Pulse Levels
VCC / 0V
Input Rise and Fall Times
1V/ns
Input and Output Timing
Reference Level
0.5Vcc
tCLZ1, tCLZ2, tBE, tOLZ, tCHZ1,
tCHZ2, tBDO, tOHZ, tWHZ, tOW
CL = 5pF+1TTL
Output Load
Others
CL = 30pF+1TTL
1. Including jig and scope capacitance.
n KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
MUST BE
STEADY
MUST BE
STEADY
MAY CHANGE
FROM
“H” TO “L”
WILL BE CHANGE
FROM
“H” TO “L”
MAY CHANGE
FROM
“L” TO “H”
WILL BE CHANGE
FROM
“L” TO “H”
DON
’T CARE
ANY CHANGE
PERMITTED
CHANGE :
STATE UNKNOW
DOES NOT
APPLY
CENTER LINE IS
HIGH INPEDANCE
“OFF” STATE
CL
(1)
1 TTL
Output
ALL INPUT PULSES
→ ←
90%
VCC
GND
Rise Time:
1V/ns
Fall Time:
1V/ns
90%
→ ←
10%
10%
Data Retention Mode
VCC
tCDR
VCC
tR
VIH
VIH
CE1≧VCC - 0.2V
VDR≧1.0V
CE1
VCC
CE2
Data Retention Mode
VCC
tCDR
VCC
tR
VIL
VIL
VCC
VDR≧1.0V
CE2≦0.2V


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