BH616UV1611DIP55 datasheet(1/12 Pages) BSI

Part #	BH616UV1611DIP55

Description	Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit / 2M x 8-bit

Download	12 Pages

Scroll/Zoom	100%

Manufacturer	BSI [Brilliance Semiconductor]

Direct Link

Logo

1 / 12 page

Ultra Low Power/High Speed CMOS SRAM

1M X 16 bit / 2M x 8-bit

BH616UV1611

R0201-BH616UV1611

Revision

1.3

Otc.

2006

1

Pb-Free and Green package materials are compliant to RoHS

n FEATURES

Ÿ Wide V

CC low operation voltage : 1.65V ~ 3.6V

Ÿ Ultra low power consumption :

VCC = 3.6V

Operation current : 10mA (Max.) at 55ns

2mA (Max.) at 1MHz

Standby current : 5.0uA (Typ.) at 3.0V/25

OC

VCC = 1.2V

Data retention current : 1.5uA(Typ.) at 25

OC

Ÿ High speed access time :

-55

55ns (Max.) at VCC=1.65~3.6V

-70

70ns (Max.) at VCC=1.65~3.6V

Ÿ Automatic power down when chip is deselected

Ÿ Easy expansion with CE1, CE2 and OE options

Ÿ I/O Configuration x8/x16 selectable by LB and UB pin.

Ÿ Three state outputs and TTL compatible

Ÿ Fully static operation, no clock, no refresh

Ÿ Data retention supply voltage as low as 1.0V

n DESCRIPTION

The BH616UV1611 is a high performance, ultra low power CMOS

Static Random Access Memory organized as 1,048,576 by 16 bits

and operates in a wide range of 1.65V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both

high speed and low power features with typical operating current of

1.5mA at 1MHz at 3.0V/25

OC and maximum access time of 55ns at

1.65V/85

OC.

Easy memory expansion is provided by an active LOW chip enable

(CE1), an active HIGH chip enable (CE2) and active LOW output

enable (OE) and three-state output drivers.

The BH616UV1611 has an automatic power down feature, reducing

the power consumption significantly when chip is deselected.

The BH616UV1611 is available in DICE form, JEDEC standard

48-pin TSOP-I and 48-ball BGA package.

n POWER CONSUMPTION

POWER DISSIPATION

STANDBY

(ICCSB1, Max)

Operating

(ICC, Max)

VCC=3.6V

VCC=1.8V

PRODUCT

FAMILY

OPERATING

TEMPERATURE

VCC=3.6V

VCC=1.8V

1MHz

10MHz

fMax.

1MHz

10MHz

fMax.

PKG TYPE

BH616UV1611DI

DICE

BH616UV1611BI

BGA-48-0810

BH616UV1611TI

Industrial

-40

OC to +85OC

30uA

25uA

2mA

6mA

10mA

1.5mA

5mA

8mA

TSOP I-48

n PIN CONFIGURATIONS

n BLOCK DIAGRAM

Brilliance Semiconductor, Inc. reserves the right to change products and specifications without notice.

Detailed product characteristic test report is available upon request and being accepted.

Address

Input

Buffer

Row

Decoder

Memory Array

1024 x 16384

Column I/O

Write Driver

Sense Amp

Column Decoder

Address Input Buffer

A7

A4 A3 A2

Data

Input

Buffer

Control

DQ0

.

DQ15

A15

A14

A13

A12

A11

A10

A9

A8

A19

A18

16

10

1024

16384

1024

10

A16

Data

Output

Buffer

A5

CE2, CE1

WE

OE

UB

LB

VCC

VSS

A1

.

A6

A17

A0

A15

A14

A13

A12

A11

A10

A9

A8

A19

NC

WE

CE2

NC

UB

LB

A18

A17

A7

A6

A5

A4

A3

A2

A1

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

22

23

24

BH616UV1611TI

48

47

46

45

44

43

42

41

40

39

38

37

36

35

34

33

32

31

30

29

28

27

26

25

A16

BYTE

VSS

DQ15/A20

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

VCC

DQ11

DQ3

DQ10

DQ2

DQ9

DQ1

DQ8

DQ0

OE

VSS

CE1

A0

G

H

F

E

D

C

B

A

1

2

3

4

5

6

A9

A11

A10

NC

A12

A14

A13

A15

WE

DQ13

DQ5

DQ7

DQ6

A17

A16

A7

VSS

VCC

DQ12

DQ11

DQ4

DQ3

NC

A5

OE

A3

A0

A6

A4

A1

A2

CE2

UB

DQ10

DQ1

CE1

DQ2

DQ0

48-ball BGA top view

LB

DQ8

DQ9

VSS

VCC

DQ14

DQ15

A18

A19

A8

Similar Part No. - BH616UV1611DIP55

Manufacturer	Part #	Datasheet	Description
Brilliance Semiconducto...	BH616UV1611	227Kb / 10P	Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit
	BH616UV1611AIG55	227Kb / 10P	Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit
	BH616UV1611AIG70	227Kb / 10P	Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit
	BH616UV1611AIP55	227Kb / 10P	Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit
	BH616UV1611AIP70	227Kb / 10P	Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit

More results

Similar Description - BH616UV1611DIP55

Manufacturer	Part #	Datasheet	Description
Brilliance Semiconducto...	BH616UV1610	152Kb / 10P	Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit
	BH616UV1611	227Kb / 10P	Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit
	BH62UV8001	221Kb / 9P	Ultra Low Power/High Speed CMOS SRAM 1M X 8 bit
	BH62UV1601	148Kb / 9P	Ultra Low Power/High Speed CMOS SRAM 2M X 8 bit
	BH62UV8001	148Kb / 9P	Ultra Low Power/High Speed CMOS SRAM 1M X 8 bit
	BH62UV1600	123Kb / 9P	Ultra Low Power/High Speed CMOS SRAM 2M X 8 bit
	BS616UV1620	215Kb / 12P	Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
AMIC Technology	LP62S161024	182Kb / 16P	16M BIT (1M x 16 / 2M x 8) LOW VOLTAGE CMOS SRAM
Lyontek Inc.	LY61L10248A	297Kb / 13P	1M X 8 BIT HIGH SPEED CMOS SRAM
Lyontek Inc.	LY61L10248A	790Kb / 14P	1M X 8 BIT HIGH SPEED CMOS SRAM

More results

BH616UV1611DIP55 Datasheet(PDF) 1 Page - Brilliance Semiconductor

BH616UV1611DIP55 Datasheet(HTML) 1 Page - Brilliance Semiconductor

Similar Part No. - BH616UV1611DIP55

Similar Description - BH616UV1611DIP55

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL