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BS616LV2019EC55 Datasheet(PDF) 7 Page - Brilliance Semiconductor

Part # BS616LV2019EC55
Description  Very Low Power CMOS SRAM 256K X 16 bit
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Manufacturer  BSI [Brilliance Semiconductor]
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Logo BSI - Brilliance Semiconductor

BS616LV2019EC55 Datasheet(HTML) 7 Page - Brilliance Semiconductor

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BS616LV4017
R0201-BS616LV4017
Revision
1.3
May.
2006
7
n AC ELECTRICAL CHARACTERISTICS (T
A = -40
OC to +85OC)
WRITE CYCLE
CYCLE TIME : 55ns
(VCC=3.0~5.5V)
CYCLE TIME : 70ns
(VCC=2.7~5.5V)
JEDEC
PARAMETER
NAME
PARANETER
NAME
DESCRIPTION
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
UNITS
tAVAX
tWC
Write Cycle Time
55
--
--
70
--
--
ns
tAVWL
tAS
Address Set up Time
0
--
--
0
--
--
ns
tAVWH
tAW
Address Valid to End of Write
55
--
--
70
--
--
ns
tELWH
tCW
Chip Select to End of Write
(CE)
55
--
--
70
--
--
ns
tBLWH
tBW
Data Byte Control to End of Write
(LB, UB)
25
--
--
30
--
--
ns
tWLWH
tWP
Write Pulse Width
30
--
--
35
--
--
ns
tWHAX
tWR
Write Recovery Time
(CE, WE)
0
--
--
0
--
--
ns
tWLQZ
tWHZ
Write to Output High Z
--
--
25
--
--
30
ns
tDVWH
tDW
Data to Write Time Overlap
25
--
--
30
--
--
ns
tWHDX
tDH
Data Hold from Write Time
0
--
--
0
--
--
ns
tGHQZ
tOHZ
Output Disable to Output in High Z
--
--
25
--
--
30
ns
tWHQX
tOW
End of Write to Output Active
5
--
--
5
--
--
ns
n SWITCHING WAVEFORMS (WRITE CYCLE)
WRITE CYCLE 1
(1)
tWC
tWR1
(3)
tCW
(11)
tWP
(2)
tAW
tOHZ
(4,10)
tAS
tWR2
(3)
tDH
tDW
DIN
DOUT
WE
LB, UB
CE
OE
ADDRESS
(5)
tBW


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