BS616UV4016DI10 datasheet(5/11 Pages) BSI

Part #	BS616UV4016DI10

Description	Ultra Low Power CMOS SRAM 256K X 16 bit

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Manufacturer	BSI [Brilliance Semiconductor]

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BS616UV4016

R0201-BS616UV4016

Revision

1.6

May.

2006

5

n AC ELECTRICAL CHARACTERISTICS (T

A = -40

OC to +85OC)

READ CYCLE

CYCLE TIME : 100ns

(VCC=1.9~3.6V)

JEDEC

PARAMETER

NAME

PARANETER

NAME

DESCRIPTION

MIN.

TYP.

MAX.

UNITS

tAVAX

tRC

Read Cycle Time

100

--

ns

tAVQX

tAA

Address Access Time

--

100

ns

tELQV

tACS

Chip Select Access Time

(CE)

--

100

ns

tBLQV

tBA

Data Byte Control Access Time

(LB, UB)

--

100

ns

tGLQV

tOE

Output Enable to Output Valid

--

50

ns

tELQX

tCLZ

Chip Select to Output Low Z

(CE)

15

--

ns

tBLQX

tBE

Data Byte Control to Output Low Z

(LB, UB)

15

--

ns

tGLQX

tOLZ

Output Enable to Output Low Z

15

--

ns

tEHQZ

tCHZ

Chip Select to Output High Z

(CE)

--

40

ns

tBHQZ

tBDO

Data Byte Control to Output High Z

(LB, UB)

--

40

ns

tGHQZ

tOHZ

Output Enable to Output High Z

--

40

ns

tAVQX

tOH

Data Hold from Address Change

15

--

ns

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BS616UV4016DI10 Datasheet(PDF) 5 Page - Brilliance Semiconductor

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