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BS62UV256DIP15 Datasheet(PDF) 7 Page - Brilliance Semiconductor

Part # BS62UV256DIP15
Description  Ultra Low Power CMOS SRAM 32K X 8 bit
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Manufacturer  BSI [Brilliance Semiconductor]
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BS62UV256DIP15 Datasheet(HTML) 7 Page - Brilliance Semiconductor

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BS62UV256
R0201-BS62UV256
Revision
2.6
Sep.
2006
7
WRITE CYCLE 2
(1,6)
NOTES:
1. WE must be high during address transitions.
2. The internal write time of the memory is defined by the overlap of CE and WE low. All signals
must be active to initiate a write and any one signal can terminate a write by going inactive. The
data input setup and hold timing should be referenced to the second transition edge of the
signal that terminates the write.
3. tWR is measured from the earlier of CE or WE going high at the end of write cycle.
4. During this period, DQ pins are in the output state so that the input signals of opposite phase to
the outputs must not be applied.
5. If the CE low transition occurs simultaneously with the WE low transitions or after the WE
transition, output remain in a high impedance state.
6. OE is continuously low (OE = VIL).
7. DOUT is the same phase of write data of this write cycle.
8. DOUT is the read data of next address.
9. If CE is low during this period, DQ pins are in the output state. Then the data input signals of
opposite phase to the outputs must not be applied to them.
10.Transition is measured ± 500mV from steady state with CL = 5pF.
The parameter is guaranteed but not 100% tested.
11.tCW is measured from the later of CE going low to the end of write.
tWC
tCW
(11)
tWP
(2)
tAW
tWHZ
(4,10)
tAS
tDH
tDW
DIN
DOUT
WE
CE
tOW
(7)
(8)
(8,9)
ADDRESS
(5)


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