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ES1GL Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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ES1GL Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 2 page Dimensions in inches and (millimeters) Version: A06 ES1AL - ES1JL 1.0 AMP. Surface Mount Super Fast Rectifiers Sub SMA Features For surface mounted application Low profile package Low power loss, high efficiency, Ideal for automated placement Glass passivated chip junction High temperature soldering: 260 OC/10 seconds at terminals Mechanical Data Cases: Sub SMA plastic case Terminal : Pure tin plated, lead free. Polarity: Color band cathode end Packing: 12mm tape per EIA STD RS-481 Weight: approx. 15mg Marking: As below table Maximum Ratings and Electrical Characteristics Rating at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol ES 1AL ES 1BL ES 1CL ES 1DL ES 1FL ES 1GL ES 1HL ES 1JL Units Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 300 400 500 600 V Maximum RMS Voltage VRMS 35 70 105 140 210 280 350 420 V Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 500 600 V Marking Code EALYM EBLYM ECLYM EDLYM EFLYM EGLYM EHLYM EJLYM Maximum Average Forward Rectified Current See Fig. 1 I(AV) 1.0 A Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) IFSM 30 A Maximum Instantaneous Forward Voltage @ 1.0A VF 0.95 1.3 1.7 V Maximum DC Reverse Current @ TA =25 oC at Rated DC Blocking Voltage @ TA=100 oC IR 5.0 100 uA uA Maximum Reverse Recovery Time ( Note 1 ) Trr 35 nS Typical Junction Capacitance ( Note 2 ) Cj 10 8 pF Maximum Thermal Resistance (Note 3) RθJA RθJL 85 35 oC/W Operating Temperature Range TJ -55 to +150 o C Storage Temperature Range T STG -55 to +150 o C Notes: 1. Reverse Recovery Test Conditions: I F=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied V R=4.0 Volts 3. P.C.B. Mounted on 0.2 x 0.2” (5.0 x 5.0mm) Copper Pad Area. |
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