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TISP4240M3BJ Datasheet(PDF) 2 Page - Power Innovations Ltd |
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TISP4240M3BJ Datasheet(HTML) 2 Page - Power Innovations Ltd |
2 / 14 page TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ, TISP4240M3BJ THRU TISP4400M3BJ BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS 2 NOVEMBER 1997 - REVISED MARCH 1999 P R OD U C T INF O RMA T ION This TISP4xxxM3BJ range consists of thirteen voltage variants to meet various maximum system voltage levels (58 V to 275 V). They are guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These medium (M) current protection devices are in a plastic package SMBJ (JEDEC DO-214AA with J-bend leads) and supplied in embossed tape reel pack. For alternative voltage and holding current values, consult the factory. For higher rated impulse currents in the SMB package, the 100 A 10/1000 TISP4xxxH3BJ series is available. absolute maximum ratings, TA = 25°C (unless otherwise noted) RATING SYMBOL VALUE UNIT Repetitive peak off-state voltage, (see Note 1) ‘4070 ‘4080 ‘4095 ‘4125 ‘4145 ‘4165 ‘4180 ‘4200 ‘4240 ‘4265 ‘4300 ‘4350 ‘4400 VDRM ± 58 ± 65 ± 75 ±100 ±120 ±135 ±145 ±155 ±180 ±200 ±230 ±275 ±300 V Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4) ITSP A 2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 300 8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 220 10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 120 5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 110 0.2/310 µs (I3124, 0.5/700 µs voltage wave shape) 100 5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape) 100 5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 100 10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 75 10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) 50 Non-repetitive peak on-state current (see Notes 2, 3 and 5) ITSM 30 32 2.1 A 20 ms (50 Hz) full sine wave 16.7 ms (60 Hz) full sine wave 1000 s 50 Hz/60 Hz a.c. Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 100 A diT/dt 300 A/µs Junction temperature TJ -40 to +150 °C Storage temperature range Tstg -65 to +150 °C NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures. 2. Initially the TISP4xxxM3BJ must be in thermal equilibrium with TJ = 25°C. 3. The surge may be repeated after the TISP4xxxM3BJ returns to its initial conditions. 4. See Applications Information and Figure 11 for current ratings at other temperatures. 5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient temperatures above 25 °C |
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