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TISP4240M3BJ Datasheet(PDF) 2 Page - Power Innovations Ltd

Part # TISP4240M3BJ
Description  BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
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Manufacturer  POINN [Power Innovations Ltd]
Direct Link  http://www.bourns.com
Logo POINN - Power Innovations Ltd

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TISP4070M3BJ THRU TISP4095M3BJ, TISP4125M3BJ THRU TISP4200M3BJ,
TISP4240M3BJ THRU TISP4400M3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
2
NOVEMBER 1997 - REVISED MARCH 1999
P R OD U C T
INF O RMA T ION
This TISP4xxxM3BJ range consists of thirteen voltage variants to meet various maximum system voltage
levels (58 V to 275 V). They are guaranteed to voltage limit and withstand the listed international lightning
surges in both polarities. These medium (M) current protection devices are in a plastic package SMBJ
(JEDEC DO-214AA with J-bend leads) and supplied in embossed tape reel pack. For alternative voltage and
holding current values, consult the factory. For higher rated impulse currents in the SMB package, the 100 A
10/1000 TISP4xxxH3BJ series is available.
absolute maximum ratings, TA = 25°C (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Repetitive peak off-state voltage, (see Note 1)
‘4070
‘4080
‘4095
‘4125
‘4145
‘4165
‘4180
‘4200
‘4240
‘4265
‘4300
‘4350
‘4400
VDRM
± 58
± 65
± 75
±100
±120
±135
±145
±155
±180
±200
±230
±275
±300
V
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
ITSP
A
2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape)
300
8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current)
220
10/160 µs (FCC Part 68, 10/160 µs voltage wave shape)
120
5/200 µs (VDE 0433, 10/700 µs voltage wave shape)
110
0.2/310 µs (I3124, 0.5/700 µs voltage wave shape)
100
5/310 µs (ITU-T K20/21, 10/700 µs voltage wave shape)
100
5/310 µs (FTZ R12, 10/700 µs voltage wave shape)
100
10/560 µs (FCC Part 68, 10/560 µs voltage wave shape)
75
10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape)
50
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
ITSM
30
32
2.1
A
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current,
Exponential current ramp, Maximum ramp value < 100 A
diT/dt
300
A/µs
Junction temperature
TJ
-40 to +150
°C
Storage temperature range
Tstg
-65 to +150
°C
NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.
2. Initially the TISP4xxxM3BJ must be in thermal equilibrium with TJ = 25°C.
3. The surge may be repeated after the TISP4xxxM3BJ returns to its initial conditions.
4. See Applications Information and Figure 11 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring
track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient temperatures
above 25 °C


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