MB85R1002_07 datasheet(7/15 Pages) FUJITSU

Part #	MB85R1002

Description	Memory FRAM CMOS 1 M Bit (64 K 횞 16)

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Manufacturer	FUJITSU [Fujitsu Component Limited.]

Direct Link	http://edevice.fujitsu.com/fmd/en/index.html

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MB85R1002

7

■ ELECTRICAL CHARACTERISTICS

1.

DC CHARACTERISTICS

(within recommended operating conditions)

*1 : During the measurement of ICC , the Address, Data In were taken to only change once per active cycle.

Iout : output current

*2 : All pins other than setting pins should be input at the CMOS level voltages such as H

≥ VCC − 0.2 V, L ≤ 0.2 V.

Parameter

Symbol

Test Conditions

Value

Unit

Min

Typ

Max

Input Leakage Current

|ILI|VIN = 0 V to VCC

⎯⎯

10

µA

Output Leakage Current

|ILO|VOUT = 0 V to VCC, CE1 = VIH or OE = VIH

⎯⎯

10

µA

Operating Power Supply

Current

ICC

CE1 = 0.2 V, CE2 = VCC

−0.2 V, Iout = 0 mA*1

⎯

10

15

mA

Standby Current

ISB

CE1

≥ VCC−0.2 V

⎯

10

50

µA

CE2

≤ 0.2 V*2

OE

≥ VCC−0.2 V, WE ≥ VCC−0.2 V*2

LB

≥ VCC−0.2 V, UB ≥ VCC−0.2 V*2

Output Voltage (high)

VOH

IOH =

−0.1 mA

VCC

× 0.8 ⎯⎯

V

Output Voltage (low)

VOL

IOL = 2.0 mA

⎯⎯

0.4

V

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MB85R1002 Datasheet(PDF) 7 Page - Fujitsu Component Limited.

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