TISP83121D

DUAL-GATE UNIDIRECTIONAL OVERVOLTAGE PROTECTOR

2

FEBRUARY 1999

P R ODUCT I N FORMA T ION

absolute maximum ratings

RATING

SYMBOL

VALUE

UNIT

Repetitive peak off-state voltage, 0 °C to 70 °C

100

V

Non-repetitive peak on-state pulse current (see Notes 1 and 2)

A

10/1000 µs (GR-1089-CORE, open-circuit voltage wave shape 10/1000 µs)

150

5/310 µs (CCITT K20/21, open-circuit voltage wave shape 7 kV10/700 µs)

150

8/20 µs (ANSI C62.41, open-circuit voltage wave shape 1.2/50 µs)

500

Non-repetitive peak on-state current, 50 Hz, halfwave rectified sinewave, (see Notes 1 and 2)

100 ms

1 s

900 s

22

8

3

A

Junction temperature

-40 to +150

°C

Storage temperature range

-65 to +150

°C

its initial conditions. For operation at the rated current value, pins 1, 4, 5 and 8 must be connected together.

2. Above 70 °C, derate linearly to zero at 150 °C lead temperature.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Off-state current

1µA

Repetitive peak off-state

current

10

µA

Holding current

90

60

300

mA

Reverse current

1mA

Gate G1 trigger current

+200

mA

Gate G2 trigger current

-180

mA

G1-K trigger voltage

+1.8

V

G2-A trigger voltage

-1.8

V

Anode to cathode off-

state capacitance

100

pF

NOTE

3: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured

device terminals are decoupled to the guard terminal of the bridge.

thermal characteristics

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Junction to free air thermal resistance

105

°C/W