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TISPPBL1D Datasheet(PDF) 3 Page - Power Innovations Ltd |
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TISPPBL1D Datasheet(HTML) 3 Page - Power Innovations Ltd |
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3 / 19 page  3 AUGUST 1997 - REVISED DECEMBER 1999 TISPPBL1D, TISPPBL1P, TISPPBL2D, TISPPBL2P DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON COMPONENTS SLICS PROD UCT I N FORM A T ION recommended operating conditions SEE Figure 18 MIN TYP MAX UNIT C1 Gate decoupling capacitor 100 220 nF R1a R1b Series resistance for GR-1089-CORE first-level and second-level surge survival Series resistance for GR-1089-CORE first-level surge survival Series resistance for ITU-T recommendation K20/21 40 25 10 Ω electrical characteristics, -40 °C ≤T A ≤ 85 °C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ID Off-state current VD =VDRM, VGK =0 TJ = -40 °C -5 µA TJ = 85 °C -50 µA V(BO) Breakover voltage IT = -20 A, 0.5/700 generator, Figure 3 test circuit (See Figure 2) -70 V t(BR) Breakdown time IT = -20 A, 0.5/700 generator, Figure 3 test cir- cuit (See Figure 2) V(BR) < -50 V 1 µs VF Forward voltage IF =5 A, tw = 500 µs 3V VFRM Peak forward recovery voltage IF = 20 A, 0.5/700 generator, Figure 3 test circuit (See Figure 2) 8 V tFR Forward recovery time IF = 20 A, 0.5/700 generator, Figure 3 test circuit (See Figure 2) VF > 5 V VF > 1 V 1 10000 µs IH Holding current IT = -1 A, di/dt = 1A/ms, VGG =-50 V, TISPPBL1 TISPPBL2 -105 -150 mA IGAS Gate reverse current VGG =VGKRM, VAK =0 TJ = -40 °C -5 µA TJ = 85 °C -50 µA IGAT Gate reverse current, on state IT =-0.5A, tw = 500 µs, VGG =-50 V, TA =25 °C -1 mA IGAF Gate reverse current, forward conducting state IF =1 A, tw = 500 µs, VGG =-50 V, TA =25 °C -10 mA IGT Gate trigger current IT =-5 A, tp(g) ≥ 20 µs, VGG =-50 V, TA =25 °C 5 mA VGT Gate trigger voltage IT =-5 A, tp(g) ≥ 20 µs, VGG =-50 V, TA =25 °C 2.5 V CAK Anode-cathode off- state capacitance f=1 MHz, Vd =1 V, IG =0, TA =25 °C (see Note 3) VD = -3 V 110 pF VD =-50 V 60 pF NOTE 3: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured device terminals are a.c. connected to the guard terminal of the bridge. thermal characteristics PARAMETER TEST CONDITIONS MIN TYP MAX UNIT RθJA Junction to free air thermal resistance Ptot =0.8 W, TA =25 °C 5cm2, FR4 PCB D Package 160 °C/W P Package 100 |
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