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IRFB3507PBF Datasheet(PDF) 4 Page - International Rectifier

Part # IRFB3507PBF
Description  HEXFET짰Power MOSFET
Download  12 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRFB3507PBF Datasheet(HTML) 4 Page - International Rectifier

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IRFB/S/SL3507PbF
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 10. Drain-to-Source Breakdown Voltage
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 11. Typical COSS Stored Energy
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
0.0
0.4
0.8
1.2
1.6
2.0
VSD, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
TJ = 25°C
TJ = 175°C
VGS = 0V
25
50
75
100
125
150
175
TC , Case Temperature (°C)
0
20
40
60
80
100
Limited By Package
-60 -40 -20 0
20 40 60 80 100 120 140 160 180
TJ , Temperature ( °C )
70
75
80
85
90
95
0
1020304050
607080
VDS, Drain-to-Source Voltage (V)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
0
200
400
600
800
1000
1200
ID
TOP
8.9A
12A
BOTTOM 58A
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Tc = 25°C
Tj = 175°C
Single Pulse
100µsec
1msec
10msec
DC


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