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TPS54377 Datasheet(PDF) 4 Page - Texas Instruments |
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TPS54377 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 21 page www.ti.com TPS54377 SLVS779 – SEPTEMBER 2007 ELECTRICAL CHARACTERISTICS (continued) TJ = –40°C to 125°C, VI = 3 V to 6 V (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT ERROR AMPLIFIER Error amplifier open loop voltage gain 1 k Ω COMP to AGND(4) 90 110 dB Error amplifier unity gain bandwidth Parallel 10 k Ω, 160 pF COMP to AGND(4) 3 5 MHz Error amplifier common-mode input Powered by internal LDO(4) 0 VBIAS V voltage range IIB Input bias current, VSENSE VSENSE = Vref 60 250 nA Output voltage slew rate (symmetric), VO 1 1.4 V/µs COMP PWM COMPARATOR PWM comparator propagation delay time, PWM comparator input to PH pin 10 mV overdrive(4) 70 85 ns (excluding dead time) SLOW-START/ENABLE Enable threshold voltage, SS/ENA 0.82 1.2 1.4 V Enable hysteresis voltage, SS/ENA (4) 0.03 V Falling edge deglitch, SS/ENA (4) 2.5 µs Internal slow-start time 2.6 3.35 4.1 ms Charge current, SS/ENA SS/ENA = 0 V 3 5 8 µA Discharge current, SS/ENA SS/ENA = 0.2 V, VI = 2.7 V 1.3 2.3 4 mA POWER GOOD Power good threshold voltage VSENSE falling 90 %Vref Power good hysteresis voltage (4) 3 %Vref Power good falling edge deglitch (4) 35 µs Output saturation voltage, PWRGD I(sink) = 2.5 mA 0.18 0.3 V Leakage current, PWRGD VI = 5.5 V 1 µA CURRENT LIMIT VI = 3 V, output shorted (4) 4 6.5 Current limit trip point A VI = 6 V, output shorted (4) 4.5 7.5 Current limit leading edge blanking 100 ns time(4) Current limit total response time (4) 200 ns THERMAL SHUTDOWN Thermal shutdown trip point (4) 135 150 165 °C Thermal shutdown hysteresis (4) 10 °C OUTPUT POWER MOSFETS VI = 6 V 59 88 m Ω rDS(on) Power MOSFET switches VI = 3 V 85 136 (4) Specified by design 4 Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated Product Folder Link(s): TPS54377 |
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