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STR751FR0 Datasheet(PDF) 52 Page - STMicroelectronics |
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STR751FR0 Datasheet(HTML) 52 Page - STMicroelectronics |
52 / 81 page Electrical parameters STR750Fxx STR751Fxx STR752Fxx STR755Fxx 52/81 Electro Magnetic Interference (EMI) Based on a simple application running on the product (toggling 2 LEDs through the I/O ports), the product is monitored in terms of emission. This emission test is in line with the norm SAE J 1752/3 which specifies the board and the loading of each pin. Absolute Maximum Ratings (Electrical Sensitivity) Based on three different tests (ESD, LU and DLU) using specific measurement methods, the product is stressed in order to determine its performance in terms of electrical sensitivity. For more details, refer to the application note AN1181. Electro-Static Discharge (ESD) Electro-Static Discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models can be simulated: Human Body Model and Machine Model. This test conforms to the JESD22-A114A/A115A standard. Table 29. EMI characteristics Symbo l Parameter Conditions Monitored Frequency Band Max vs. [fOSC4M/fHCLK] Unit 4/32MHz 4/60MHz SEMI Peak level Flash devices: VDD_IO=3.3 V or 5 V, TA=+25° C, LQFP64 package conforming to SAE J 1752/3 0.1 MHz to 30 MHz 22 26 dB µV 30 MHz to 130 MHz 31 26 130 MHz to 1 GHz 19 23 SAE EMI Level >4 >4 - Table 30. Absolute maximum ratings Symbol Ratings Conditions Maximum value(1) 1. Data based on product characterisation, not tested in production. Unit VESD(HBM) Electro-static discharge voltage (Human Body Model) TA=+25° C 2000 V VESD(MM) Electro-static discharge voltage (Machine Model) 200 VESD(CDM) Electro-static discharge voltage (Charge Device Model) 750 |
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