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HSDL-4230 Datasheet(PDF) 2 Page - Agilent(Hewlett-Packard)

Part # HSDL-4230
Description  High-Performance T-13/4 (5 mm) TS AlGaAs Infrared (875 nm) Lamp
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Manufacturer  HP [Agilent(Hewlett-Packard)]
Direct Link  http://www.home.agilent.com
Logo HP - Agilent(Hewlett-Packard)

HSDL-4230 Datasheet(HTML) 2 Page - Agilent(Hewlett-Packard)

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2
The wide angle emitter, HSDL-
4220, is compatible with the IrDA
SIR standard and can be used
with the HSDL-1000 integrated
SIR transceiver.
Absolute Maximum Ratings
Parameter
Symbol
Min.
Max.
Unit
Reference
Peak Forward Current
IFPK
500
mA
[2], Fig. 2b
Duty Factor = 20%
Pulse Width = 100
µs
Average Forward Current
IFAVG
100
mA
[2]
DC Forward Current
IFDC
100
mA
[1], Fig. 2a
Power Dissipation
PDISS
260
mW
Reverse Voltage (IR = 100
µA)
VR
5V
Transient Forward Current (10
µs Pulse)
IFTR
1.0
A
[3]
Operating Temperature
TO
070
°C
Storage Temperature
TS
-20
85
°C
LED Junction Temperature
TJ
110
°C
Lead Soldering Temperature
260 for
°C
[1.6 mm (0.063 in.) from body]
5 seconds
Notes:
1. Derate linearly as shown in Figure 4.
2. Any pulsed operation cannot exceed the Absolute Max Peak Forward Current as specified in Figure 5.
3. The transient peak current is the maximum non-recurring peak current the device can withstand without damaging the LED die and
the wire bonds.
Electrical Characteristics at 25
°C
Parameter
Symbol
Min.
Typ.
Max.
Unit
Condition
Reference
Forward Voltage
VF
1.30
1.50
1.70
V
IFDC = 50 mA
Fig. 2a
2.15
IFPK = 250 mA
Fig. 2b
Forward Voltage
∆V/∆T
-2.1
mV/
°CI
FDC = 50 mA
Fig. 2c
Temperature Coefficient
-2.1
IFDC = 100 mA
Series Resistance
RS
2.8
ohms
IFDC = 100 mA
Diode Capacitance
CO
40
pF
0 V, 1 MHz
Reverse Voltage
VR
220
V
IR = 100
µA
Thermal Resistance,
R
θ
jp
110
°C/W
Junction to Pin
The package design of these
emitters is optimized for efficient
power dissipation. Copper
leadframes are used to obtain
better thermal performance than
the traditional steel leadframes.


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