IRF7316PbF

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 10. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 9. Typical Capacitance Vs.

Drain-to-Source Voltage

0.1

1

10

100

0.00001

0.0001

0.001

0.01

0.1

1

10

100

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

1

2

J

DM

thJA

A

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

1

0.01

0.02

0.05

0.10

0.20

0.50

SINGLE PULSE

(THERMAL RESPONSE)

0

200

400

600

800

1000

1200

1400

1

10

100

DS

V

, Drain-to-Source Voltage (V)

A

f = 1 MHz

Ciss = Cgs + Cgd + Cds

SHORTED

Crss = Cgd

Coss = Cds + Cgd

-

0

10

20

30

40

0

4

8

12

16

20

Q , Total Gate Charge (nC)

G

I =

D

-4.9A

V

=-15V

DS