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IRG4PC30UPBF Datasheet(PDF) 2 Page - International Rectifier

Part # IRG4PC30UPBF
Description  INSULATED GATE BIPOLAR TRANSISTOR UltraFast Speed IGBT
Download  9 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG4PC30UPBF Datasheet(HTML) 2 Page - International Rectifier

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IRG4PC30UPbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
—
50
75
IC = 12A
Qge
Gate - Emitter Charge (turn-on)
—
8.1
12
nC
VCC = 400V
See Fig.8
Qgc
Gate - Collector Charge (turn-on)
—
18
27
VGE = 15V
td(on)
Turn-On Delay Time
—
17
—
tr
Rise Time
—
9.6
—
TJ = 25°C
td(off)
Turn-Off Delay Time
—
78
120
IC = 12A, VCC = 480V
tf
Fall Time
—
97
150
VGE = 15V, RG = 23Ω
Eon
Turn-On Switching Loss
—
0.16
—
Energy losses include "tail"
Eoff
Turn-Off Switching Loss
—
0.20
—
mJ
See Fig. 10, 11, 13, 14
Ets
Total Switching Loss
—
0.36 0.50
td(on)
Turn-On Delay Time
—
20
—
TJ = 150°C,
tr
Rise Time
—
13—
IC = 12A, VCC = 480V
td(off)
Turn-Off Delay Time
—
180
—
VGE = 15V, RG = 23Ω
tf
Fall Time
—
140
—
Energy losses include "tail"
Ets
Total Switching Loss
—
0.73—
mJ
See Fig. 13
, 14
LE
Internal Emitter Inductance
—
13—
nH
Measured 5mm from package
Cies
Input Capacitance
— 1100 —
VGE = 0V
Coes
Output Capacitance
—
73—
pF
VCC = 30V
See Fig. 7
Cres
Reverse Transfer Capacitance
—
14
—
ƒ = 1.0MHz
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
—
—
V
VGE = 0V, IC = 250µA
V(BR)ECS
Emitter-to-Collector Breakdown Voltage „
18
—
—
V
VGE = 0V, IC = 1.0A
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —
0.63—
V/°C VGE = 0V, IC = 1.0mA
—
1.95 2.1
IC = 12A
VGE = 15V
VCE(ON)
Collector-to-Emitter Saturation Voltage
—
2.52
—
IC = 23A
See Fig.2, 5
—
2.09
—
IC = 12A , TJ = 150°C
VGE(th)
Gate Threshold Voltage
3.0
—
6.0
VCE = VGE, IC = 250µA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
—
-13—
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance …
3.1
8.6
—
S
VCE = 100 V, IC = 12A
—
—
250
VGE = 0V, VCE = 600V
—
—
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
—
— 1000
VGE = 0V, VCE = 600V, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
—
— ±100
nA
VGE = ±20V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ICES
Zero Gate Voltage Collector Current
V
µA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
ns
ns
„ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
… Pulse width 5.0µs, single shot.
Notes:
 Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω,
(See fig. 13a)
ƒ Repetitive rating; pulse width limited by maximum
junction temperature.


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