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IRG4PC30UPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRG4PC30UPBF Datasheet(HTML) 2 Page - International Rectifier |
2 / 9 page IRG4PC30UPbF 2 www.irf.com Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) 50 75 IC = 12A Qge Gate - Emitter Charge (turn-on) 8.1 12 nC VCC = 400V See Fig.8 Qgc Gate - Collector Charge (turn-on) 18 27 VGE = 15V td(on) Turn-On Delay Time 17 tr Rise Time 9.6 TJ = 25°C td(off) Turn-Off Delay Time 78 120 IC = 12A, VCC = 480V tf Fall Time 97 150 VGE = 15V, RG = 23Ω Eon Turn-On Switching Loss 0.16 Energy losses include "tail" Eoff Turn-Off Switching Loss 0.20 mJ See Fig. 10, 11, 13, 14 Ets Total Switching Loss 0.36 0.50 td(on) Turn-On Delay Time 20 TJ = 150°C, tr Rise Time 13 IC = 12A, VCC = 480V td(off) Turn-Off Delay Time 180 VGE = 15V, RG = 23Ω tf Fall Time 140 Energy losses include "tail" Ets Total Switching Loss 0.73 mJ See Fig. 13 , 14 LE Internal Emitter Inductance 13 nH Measured 5mm from package Cies Input Capacitance 1100 VGE = 0V Coes Output Capacitance 73 pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance 14 = 1.0MHz Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 V VGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage 18 V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage 0.63 V/°C VGE = 0V, IC = 1.0mA 1.95 2.1 IC = 12A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage 2.52 IC = 23A See Fig.2, 5 2.09 IC = 12A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage -13 mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance
3.1 8.6 S VCE = 100 V, IC = 12A 250 VGE = 0V, VCE = 600V 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 1000 VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current ±100 nA VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ICES Zero Gate Voltage Collector Current V µA Switching Characteristics @ TJ = 25°C (unless otherwise specified) ns ns Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot. Notes: Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω, (See fig. 13a) Repetitive rating; pulse width limited by maximum junction temperature. |
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