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FM25L256-S Datasheet(PDF) 1 Page - Ramtron International Corporation

Part No. FM25L256-S
Description  256Kb FRAM Serial 3V Memory - Extended Temp
Download  14 Pages
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Maker  RAMTRON [Ramtron International Corporation]
Homepage  http://www.ramtron.com
Logo 

 
 1 page
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25
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Pre-Production
This is a product in the pre-production phase of development. Device
Ramtron International Corporation
characterization is complete and Ramtron does not expect to change the
1850 Ramtron Drive, Colorado Springs, CO 80921
specifications. Ramtron will issue a Product Change Notice if any
(800) 545-FRAM, (719) 481-7000
specification changes are made.
www.ramtron.com
Rev. 2.3
March 2007
Page 1 of 14
FM25L256
256Kb FRAM Serial 3V Memory – Extended Temp.
Features
256K bit Ferroelectric Nonvolatile RAM
Organized as 32,768 x 8 bits
Unlimited Read/Write Cycles
10 Year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 20 MHz Frequency
Direct Hardware Replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Write Protection Scheme
Hardware Protection
Software Protection
Low Power Consumption
Low Voltage Operation 3.0V – 3.6V
1
µA (typ) Standby Current
Industry Standard Configurations
Extended Temperature -25
°C to +85°C
8-pin SOIC and 8-pin TDFN Packages
“Green” Packaging Options
Description
The FM25L256 is a 256-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 10 years
while eliminating the complexities, overhead, and
system
level
reliability
problems
caused
by
EEPROM and other nonvolatile memories.
Unlike serial EEPROMs, the FM25L256 performs
write operations at bus speed. No write delays are
incurred. Data is written to the memory array
immediately after each byte has been transferred to
the device. The next bus cycle may commence
without the need for data polling. In addition, the
product offers virtually unlimited write endurance.
FRAM also exhibits much lower power consumption
than EEPROM.
These capabilities make the FM25L256 ideal for
nonvolatile memory applications requiring frequent
or rapid writes or low power operation. Examples
range from data collection, where the number of
write cycles may be critical, to demanding industrial
controls where the long write time of EEPROM can
cause data loss.
The FM25L256 provides substantial benefits to users
of
serial
EEPROM
as
a
hardware
drop-in
replacement. The FM25L256 uses the high-speed SPI
bus, which enhances the high-speed write capability
of FRAM technology. Device specifications are
guaranteed over an extended temperature range of
-25°C to +85°C.
Pin Configuration
Ordering Information
FM25L256-S
8-pin SOIC
FM25L256-G
“Green” 8-pin SOIC
FM25L256-DG
“Green” 8-pin TDFN
/CS
SO
/WP
VSS
VDD
/HOLD
SCK
SI
8
7
6
5
1
2
3
4
Top View
Pin Name
Function
/CS
Chip Select
/WP
Write Protect
/HOLD
Hold
SCK
Serial Clock
SI
Serial Data Input
SO
Serial Data Output
VDD
Supply Voltage (3.0 to 3.6V)
VSS
Ground
CS
SO
WP
VSS
VDD
HOLD
SCK
SI
1
2
3
4
8
7
6
5




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