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FM25L256B-DG Datasheet(PDF) 1 Page - Ramtron International Corporation

Part # FM25L256B-DG
Description  256Kb FRAM Serial 3V Memory
Download  14 Pages
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Manufacturer  RAMTRON [Ramtron International Corporation]
Direct Link  http://www.ramtron.com
Logo RAMTRON - Ramtron International Corporation

FM25L256B-DG Datasheet(HTML) 1 Page - Ramtron International Corporation

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This product conforms to specifications per the terms of the Ramtron
Ramtron International Corporation
standard warranty. The product has completed Ramtron’s internal
1850 Ramtron Drive, Colorado Springs, CO 80921
qualification testing and has reached production status.
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Rev. 3.0
July 2007
Page 1 of 14
FM25L256B
256Kb FRAM Serial 3V Memory
Features
256K bit Ferroelectric Nonvolatile RAM
Organized as 32,768 x 8 bits
Unlimited Read/Write Cycles
10 Year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 20 MHz Frequency
Direct Hardware Replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Write Protection Scheme
Hardware Protection
Software Protection
Low Power Consumption
Low Voltage Operation 2.7V – 3.6V
Industry Standard Configurations
Industrial Temperature -40
°C to +85°C
8-pin SOIC and 8-pin TDFN Packages
“Green”/RoHS Packaging
Description
The
FM25L256B
is
a
256-kilobit
nonvolatile
memory
employing
an
advanced
ferroelectric
process. A ferroelectric random access memory or
FRAM is nonvolatile and performs reads and writes
like a RAM. It provides reliable data retention for 10
years while eliminating the complexities, overhead,
and system level reliability problems caused by
EEPROM and other nonvolatile memories.
Unlike serial EEPROMs, the FM25L256B performs
write operations at bus speed. No write delays are
incurred. Data is written to the memory array
immediately after each byte has been transferred to
the device. The next bus cycle may commence
without the need for data polling. In addition, the
product offers virtually unlimited write endurance.
FRAM also exhibits much lower power consumption
than EEPROM.
These capabilities make the FM25L256B ideal for
nonvolatile memory applications requiring frequent
or rapid writes or low power operation. Examples
range from data collection, where the number of
write cycles may be critical, to demanding industrial
controls where the long write time of EEPROM can
cause data loss.
The FM25L256B provides substantial benefits to
users of serial EEPROM as a hardware drop-in
replacement. The FM25L256B uses the high-speed
SPI bus, which enhances the high-speed write
capability
of
FRAM
technology.
Device
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.
Pin Configuration
Pin Name
Function
/CS
Chip Select
/WP
Write Protect
/HOLD
Hold
SCK
Serial Clock
SI
Serial Data Input
SO
Serial Data Output
VDD
Supply Voltage (2.7 to 3.6V)
VSS
Ground
Ordering Information
FM25L256B-G
“Green”/RoHS 8-pin SOIC
FM25L256B-DG
“Green”/RoHS 8-pin TDFN
/CS
SO
/WP
VSS
VDD
/HOLD
SCK
SI
8
7
6
5
1
2
3
4
Top View
CS
SO
WP
VSS
VDD
HOLD
SCK
SI
1
2
3
4
8
7
6
5


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