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FM25L256B-DG Datasheet(PDF) 1 Page - Ramtron International Corporation |
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FM25L256B-DG Datasheet(HTML) 1 Page - Ramtron International Corporation |
1 / 14 page This product conforms to specifications per the terms of the Ramtron Ramtron International Corporation standard warranty. The product has completed Ramtron’s internal 1850 Ramtron Drive, Colorado Springs, CO 80921 qualification testing and has reached production status. (800) 545-FRAM, (719) 481-7000 http://www.ramtron.com Rev. 3.0 July 2007 Page 1 of 14 FM25L256B 256Kb FRAM Serial 3V Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • Unlimited Read/Write Cycles • 10 Year Data Retention • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI • Up to 20 MHz Frequency • Direct Hardware Replacement for EEPROM • SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Write Protection Scheme • Hardware Protection • Software Protection Low Power Consumption • Low Voltage Operation 2.7V – 3.6V Industry Standard Configurations • Industrial Temperature -40 °C to +85°C • 8-pin SOIC and 8-pin TDFN Packages • “Green”/RoHS Packaging Description The FM25L256B is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. Unlike serial EEPROMs, the FM25L256B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte has been transferred to the device. The next bus cycle may commence without the need for data polling. In addition, the product offers virtually unlimited write endurance. FRAM also exhibits much lower power consumption than EEPROM. These capabilities make the FM25L256B ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The FM25L256B provides substantial benefits to users of serial EEPROM as a hardware drop-in replacement. The FM25L256B uses the high-speed SPI bus, which enhances the high-speed write capability of FRAM technology. Device specifications are guaranteed over an industrial temperature range of -40°C to +85°C. Pin Configuration Pin Name Function /CS Chip Select /WP Write Protect /HOLD Hold SCK Serial Clock SI Serial Data Input SO Serial Data Output VDD Supply Voltage (2.7 to 3.6V) VSS Ground Ordering Information FM25L256B-G “Green”/RoHS 8-pin SOIC FM25L256B-DG “Green”/RoHS 8-pin TDFN /CS SO /WP VSS VDD /HOLD SCK SI 8 7 6 5 1 2 3 4 Top View CS SO WP VSS VDD HOLD SCK SI 1 2 3 4 8 7 6 5 |
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