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IRF1407SPBF Datasheet(HTML) 2 Page - International Rectifier

Part No. IRF1407SPBF
Description  HEXFET® Power MOSFET ( VDSS = 75V , RDS(on) = 0.0078Ω , ID = 100A )
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Maker  IRF [International Rectifier]
Homepage  http://www.irf.com
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IRF1407SPBF Datasheet(HTML) 2 Page - International Rectifier

 
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IRF1407S/LPbF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
75
–––
–––
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
–––
0.09
–––
V/°C
Reference to 25°C, ID = 1mA
ˆ
RDS(on)
Static Drain-to-Source On-Resistance
–––
––– 0.0078
VGS = 10V, ID = 78A
„
VGS(th)
Gate Threshold Voltage
2.0
–––
4.0
V
VDS = 10V, ID = 250µA
gfs
Forward Transconductance
74
–––
–––
S
VDS = 25V, ID = 78A
ˆ
–––
–––
20
µA
VDS = 75V, VGS = 0V
–––
–––
250
VDS = 60V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage
–––
–––
200
VGS = 20V
Gate-to-Source Reverse Leakage
–––
–––
-200
nA
VGS = -20V
Qg
Total Gate Charge
–––
160
250
ID = 78A
Qgs
Gate-to-Source Charge
–––
35
52
nC
VDS = 60V
Qgd
Gate-to-Drain ("Miller") Charge
–––
54
81
VGS = 10V
„ˆ
td(on)
Turn-On Delay Time
–––
11
–––
VDD = 38V
tr
Rise Time
–––
150
–––
ID = 78A
td(off)
Turn-Off Delay Time
–––
150
–––
RG = 2.5Ω
tf
Fall Time
–––
140
–––
VGS = 10V
„ˆ
Between lead,
–––
–––
6mm (0.25in.)
from package
and center of die contact
Ciss
Input Capacitance
–––
5600 –––
VGS = 0V
Coss
Output Capacitance
–––
890
–––
pF
VDS = 25V
Crss
Reverse Transfer Capacitance
–––
190
–––
ƒ = 1.0KHz, See Fig. 5
ˆ
Coss
Output Capacitance
–––
5800 –––
VGS = 0V, VDS = 1.0V, ƒ = 1.0KHz
Coss
Output Capacitance
–––
560
–––
VGS = 0V, VDS = 60V, ƒ = 1.0KHz
Coss eff.
Effective Output Capacitance
…
–––
1100 –––
VGS = 0V, VDS = 0V to 60V
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
–––
S
D
G
IGSS
ns
4.5
7.5
IDSS
Drain-to-Source Leakage Current
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
–––
–––
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

–––
–––
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.3
V
TJ = 25°C, IS = 78A, VGS = 0V
„
trr
Reverse Recovery Time
–––
110
170
ns
TJ = 25°C, IF = 78A
Qrr
Reverse RecoveryCharge
–––
390
590
nC
di/dt = 100A/µs
„ˆ
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
100
†
520
A
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Starting TJ = 25°C, L = 0.13mH
RG = 25Ω, IAS = 78A. (See Figure 12).
ƒ ISD ≤ 78A, di/dt ≤ 320A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes:
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
† Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
‡ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
ˆ Uses IRF1407 data and test conditions.


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