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BC338 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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BC338 Datasheet(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page BC337 / BC338 BC337 / BC338 NPN General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN Version 2006-05-30 Dimensions - Maße [mm] Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 (10D3) Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) BC337 BC338 Collector-Emitter-volt. – Kollektor-Emitter-Spannung E-B short VCES 50 V 30 V Collector-Emitter-volt. – Kollektor-Emitter-Spannung B open VCEO 45 V 25 V Emitter-Base-voltage – Emitter-Basis-Spannung C open VEBO 5 V Power dissipation – Verlustleistung Ptot 625 mW 1) Collector current – Kollektorstrom (dc) IC 800 mA Peak Collector current – Kollektor-Spitzenstrom ICM 1 A Base current – Basisstrom IB 100 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 2) VCE = 1 V, IC = 100 mA Group -16 Group -25 Group -40 hFE hFE hFE 100 160 250 160 250 400 250 400 630 VCE = 1 V, IC = 300 mA Group -16 Group -25 Group -40 hFE hFE hFE 60 100 170 130 200 320 – – – Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2) IC = 500 mA, IB = 50 mA VCEsat – – 0.7 V 1 Valid, if leads are kept at ambient temperature at a distance of 2 mm from case Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 2 x 2.54 C BE |
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