Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

BC558 Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # BC558
Description  General Purpose Si-Epitaxial PlanarTransistors
Download  2 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BC558 Datasheet(HTML) 1 Page - Diotec Semiconductor

  BC558 Datasheet HTML 1Page - Diotec Semiconductor BC558 Datasheet HTML 2Page - Diotec Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 1 / 2 page
background image
BC556 ... BC559
BC556 ... BC559
PNP
General Purpose Si-Epitaxial PlanarTransistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
PNP
Version 2006-05-31
Dimensions - Maße [mm]
Power dissipation – Verlustleistung
500 mW
Plastic case
Kunststoffgehäuse
TO-92
(10D3)
Weight approx. – Gewicht ca.
0.18 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
BC556
BC557
BC558/559
Collector-Emitter-voltage
E-B short
- VCES
80 V
50 V
30 V
Collector-Emitter-voltage
B open
- VCEO
65 V
45 V
30 V
Collector-Base-voltage
E open
- VCBO
80 V
50 V
30 V
Emitter-Base-voltage
C open
- VEB0
5 V
Power dissipation – Verlustleistung
Ptot
500 mW 1)
Collector current – Kollektorstrom (dc)
- IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
- ICM
200 mA
Peak Base current – Basis-Spitzenstrom
- IBM
200 mA
Peak Emitter current – Emitter-Spitzenstrom
IEM
200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Group A
Group B
Group C
DC current gain – Kollektor-Basis-Stromverhältnis 2)
- VCE = 5 V, - IC = 10 µA
hFE
typ. 90
typ. 150
typ. 270
- VCE = 5 V, - IC = 2 mA
hFE
110 ... 220
200 ... 450
420 ... 800
- VCE = 5 V, - IC = 100 mA
hFE
typ. 120
typ. 200
typ. 400
h-Parameters at/bei - VCE = 5 V, - IC = 2 mA, f = 1 kHz
Small signal current gain
Kleinsignal-Stromverstärkung
hfe
typ. 220
typ. 330
typ. 600
Input impedance – Eingangs-Impedanz
hie
1.6 ... 4.5 kΩ
3.2 ...8.5 kΩ
6 ... 15 kΩ
Output admittance – Ausgangs-Leitwert
hoe
18 < 30 µS
30 < 60 µS
60 < 110 µS
Reverse voltage transfer ratio
Spannungsrückwirkung
hre
typ. 1.5*10-4
typ. 2*10-4
typ. 3*10-4
1
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
2 x 2.54
C BE


Similar Part No. - BC558

ManufacturerPart #DatasheetDescription
logo
Semtech Corporation
BC558 SEMTECH-BC558 Datasheet
370Kb / 5P
   PNP Silicon Epitaxial Planar Transistor for switching and AF applications???
logo
List of Unclassifed Man...
BC558 ETC2-BC558 Datasheet
2Mb / 31P
   SEMICONDUCTORS
logo
Unisonic Technologies
BC558 UTC-BC558 Datasheet
108Kb / 4P
   SWITCHING AND AMPLIFIER APPLICATIONS
logo
Continental Device Indi...
BC558 CDIL-BC558 Datasheet
358Kb / 5P
   PNP SILICON PLANAR EPITAXIAL TRANSISTORS
logo
Siemens Semiconductor G...
BC558 SIEMENS-BC558 Datasheet
213Kb / 6P
   PNP SILICON TRANSISTORS
More results

Similar Description - BC558

ManufacturerPart #DatasheetDescription
logo
Diotec Semiconductor
MPSA55 DIOTEC-MPSA55 Datasheet
107Kb / 2P
   General Purpose Si-Epitaxial PlanarTransistors
BC556XBK DIOTEC-BC556XBK Datasheet
87Kb / 2P
   General Purpose Si-Epitaxial PlanarTransistors
MMBTA55 DIOTEC-MMBTA55 Datasheet
107Kb / 2P
   General Purpose Si-Epitaxial PlanarTransistors
MPSA05 DIOTEC-MPSA05 Datasheet
107Kb / 2P
   General Purpose Si-Epitaxial PlanarTransistors
BC546 DIOTEC-BC546 Datasheet
148Kb / 2P
   Si-Epitaxial PlanarTransistors
BC556 DIOTEC-BC556 Datasheet
144Kb / 2P
   Si-Epitaxial PlanarTransistors
2N3903 DIOTEC-2N3903 Datasheet
98Kb / 2P
   Si-Epitaxial PlanarTransistors
TIP125A DIOTEC-TIP125A Datasheet
49Kb / 2P
   Si-Epitaxial PlanarTransistors
2N4402 DIOTEC-2N4402 Datasheet
97Kb / 2P
   Si-Epitaxial PlanarTransistors
BC327 DIOTEC-BC327 Datasheet
143Kb / 2P
   Si-Epitaxial PlanarTransistors
More results


Html Pages

1 2


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com