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BYP35A05 Datasheet(PDF) 1 Page - Diotec Semiconductor

Part # BYP35A05
Description  Silicon-Press-Fit-Diodes - High Temperature Diodes
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Manufacturer  DIOTEC [Diotec Semiconductor]
Direct Link  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BYP35A05 Datasheet(HTML) 1 Page - Diotec Semiconductor

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BYP35A05 ... BYP35A6, BYP35K05 ... BYP35K6
BYP35A05 ... BYP35A6, BYP35K05 ... BYP35K6
Silicon-Press-Fit-Diodes – High Temperature Diodes
Silizium-Einpress-Dioden – Hochtemperatur-Dioden
Version 2006-04-22
Dimensions - Maße [mm]
Nominal Current
Nennstrom
35 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50 ... 600 V
Metal press-fit case with plastic cover
Metall-Einpressgehäuse mit Plastik-Abdeckung
Weight approx.
Gewicht ca.
10 g
Compound has classification UL94V-0
Vergussmasse nach UL94V-0 klassifiziert
Standard packaging: bulk
Standard Lieferform: lose im Karton
Maximum ratings
Grenzwerte
Type / Typ
Wire to / Draht an
Anode
Cathode
Repetive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
BYP35A05
BYP35K05
50
60
BYP35A1
BYP35K1
100
120
BYP35A2
BYP35K2
200
240
BYP35A3
BYP35K3
300
360
BYP35A4
BYP35K4
400
480
BYP35A6
BYP35K6
600
700
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 150°C
IFAV
35 A
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
130 A 1)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
360/400 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
660 A2s
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+215°C
-50...+215°C
1
Max. case temperature TC = 150°C – Max. Gehäusetemperatur TC = 150°C
© Diotec Semiconductor AG
http://www.diotec.com/
1
Ø 12.75
Ø
±0.1
11
1.3
Ø
±01
13


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