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BYP35A05 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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BYP35A05 Datasheet(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page BYP35A05 ... BYP35A6, BYP35K05 ... BYP35K6 BYP35A05 ... BYP35A6, BYP35K05 ... BYP35K6 Silicon-Press-Fit-Diodes – High Temperature Diodes Silizium-Einpress-Dioden – Hochtemperatur-Dioden Version 2006-04-22 Dimensions - Maße [mm] Nominal Current Nennstrom 35 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50 ... 600 V Metal press-fit case with plastic cover Metall-Einpressgehäuse mit Plastik-Abdeckung Weight approx. Gewicht ca. 10 g Compound has classification UL94V-0 Vergussmasse nach UL94V-0 klassifiziert Standard packaging: bulk Standard Lieferform: lose im Karton Maximum ratings Grenzwerte Type / Typ Wire to / Draht an Anode Cathode Repetive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] BYP35A05 BYP35K05 50 60 BYP35A1 BYP35K1 100 120 BYP35A2 BYP35K2 200 240 BYP35A3 BYP35K3 300 360 BYP35A4 BYP35K4 400 480 BYP35A6 BYP35K6 600 700 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 150°C IFAV 35 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 130 A 1) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 360/400 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 660 A2s Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+215°C -50...+215°C 1 Max. case temperature TC = 150°C – Max. Gehäusetemperatur TC = 150°C © Diotec Semiconductor AG http://www.diotec.com/ 1 Ø 12.75 Ø ±0.1 11 1.3 Ø ±01 13 |
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