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BCW30 Datasheet(PDF) 2 Page - Diotec Semiconductor |
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BCW30 Datasheet(HTML) 2 Page - Diotec Semiconductor |
2 / 2 page BCW29, BCW30 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Base-Emitter saturation voltage – Basis-Sättigungsspannung 2) - IC = 10 mA, - IB = 0.5 mA - IC = 50 mA, - IB = 2.5 mA - VBEsat - VBEsat – – 720 mV 810 mV – – Base-Emitter-voltage – Basis-Emitter-Spannung 2) - IC = 2 mA, - VCE = 5 V - VBE 600 mV – 750 mV Collector-Base cutoff current – Kollektor-Basis-Reststrom - VCB = 30 V, (E open) - VCE = 30 V, Tj = 100°C, (E open) - ICB0 - ICB0 – – – – 100 nA 10 µA Emitter-Base cutoff current - VEB = 5 V, (C open) - IEB0 – – 100 nA Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz fT 100 MHz – – Collector-Base Capacitance – Kollektor-Basis-Kapazität - VCB = 10 V, IE =ie = 0, f = 1 MHz CCBO –4.5 pF – Noise figure – Rauschzahl - VCE = 5 V, - IC = 200 µA, RG = 2 kΩ f = 1 kHz, Δf = 200 Hz F – – 10 dB Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 420 K/W 1) Recommended complementary NPN transistors Empfohlene komplementäre NPN-Transistoren BCW31 ... BCW33 Marking - Stempelung BCW29 = C1 BCW30 = C2 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% 1 Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss 2 http://www.diotec.com/ © Diotec Semiconductor AG |
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