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AON4703 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AON4703 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 5 page  AON4703 Symbol Min Typ Max Units BVDSS -20 V -1 TJ=55°C -5 IGSS ±100 nA VGS(th) -0.3 -0.63 -1 V ID(ON) -15 A 73 90 TJ=125°C 110 135 99 120 m Ω 133 160 m Ω gFS 47 S VSD -0.83 -1 V IS -2 A Ciss 540 pF Coss 72 pF Crss 49 pF Rg 12 Ω Qg 6.1 nC Qgs 0.6 nC Qgd 1.6 nC tD(on) 10 ns tr 12 ns tD(off) 44 ns tf 22 ns trr 21 ns Qrr 7.5 nC SCHOTTKY PARAMETERS VF 0.39 0.5 V 0.1 20 CT 34 pF trr 5.2 10 ns Qrr 0.8 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS IF=-3.4A, dI/dt=100A/µs VGS=0V, VDS=-10V, f=1MHz SWITCHING PARAMETERS Total Gate Charge VGS=-4.5V, VDS=-10V, ID=-3.4A Gate Source Charge Gate Drain Charge Turn-On Rise Time Turn-Off DelayTime VGS=-4.5V, VDS=-10V, RL=2.9Ω, RGEN=3Ω m Ω VGS=-2.5V, ID=-2.5A IS=-1A,VGS=0V VDS=-5V, ID=-3.4A RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage IDSS µA Gate Threshold Voltage VDS=VGS ID=-250µA VDS=-16V, VGS=0V VDS=0V, VGS=±8V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-3.4A, dI/dt=100A/µs Drain-Source Breakdown Voltage On state drain current ID=-250µA, VGS=0V VGS=-1.8V, ID=-1.5A VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-3.4A Reverse Transfer Capacitance Forward Voltage Drop IF=0.5A Irm Maximum reverse leakage current VR=16V mA VR=16V, TJ=125°C Junction Capacitance VR=10V SchottkyReverse Recovery Time IF=1A, dI/dt=100A/µs Schottky Reverse Recovery Charge IF=1A, dI/dt=100A/µs A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 0. June 2006 Alpha & Omega Semiconductor, Ltd. |
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