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ARF671S45 Datasheet(PDF) 2 Page - Power Semiconductors |
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ARF671S45 Datasheet(HTML) 2 Page - Power Semiconductors |
2 / 2 page ARF671 FAST RECOVERY DIODE TARGET SPECIFICATION giu 00 - ISSUE : 02 Distributed by FORWARD CHARACTERISTIC Tj = 125 °C 0 500 1000 1500 2000 2500 0.6 1.6 2.6 3.6 4.6 Forward Voltage [V] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 0.0 5.0 10.0 15.0 20.0 25.0 0.001 0.01 0.1 1 10 100 t[s] SURGE CHARACTERISTIC Tj = 125 °C 0 2 4 6 8 10 12 14 16 1 10 100 n° cycles All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement ANSALDO reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO |
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