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M13S128168A-6TG Datasheet(PDF) 10 Page - Elite Semiconductor Memory Technology Inc. |
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M13S128168A-6TG Datasheet(HTML) 10 Page - Elite Semiconductor Memory Technology Inc. |
10 / 49 page ESMT M13S128168A Elite Semiconductor Memory Technology Inc. Publication Date : Jun. 2007 Revision : 1.8 10/49 Basic Functionality Power-Up and Initialization Sequence The following sequence is required for POWER UP and Initialization. 1. Apply power and attempt to maintain CKE at a low state (all other inputs may be undefined.) - Apply VDD before or at the same time as VDDQ. - Apply VDDQ before or at the same time as VTT & VREF). 2. Start clock and maintain stable condition for a minimun of 200us. 3. The minimun of 200us after stable power and clock (CLK, CLK ), apply NOP & take CKE high. 4. Issue precharge commands for all banks of the device. *1 5. Issue EMRS to enable DLL. (To issue “DLL Enable” command, provide “Low” to A0, “High” to BA0 and “Low” to all of the rest address pins, A1~A11 and BA1) *1 6. Issue a mode register set command for “DLL reset”. The additional 200 cycles of clock input is required to lock the DLL. (To issue DLL reset command, provide “High” to A8 and “Low” to BA0) *2 7. Issue precharge commands for all banks of the device. 8. Issue 2 or more auto-refresh commands. 9. Issue a mode register set command with low to A8 to initialize device operation. *1 Every “DLL enable” command resets DLL. Therefore sequence 6 can be skipped during power up. Instead of it, the additional 200 cycles of clock input is required to lock the DLL after enabling DLL. *2 Sequence of 6 & 7 is regardless of the order. CLK CL K Co m m a n d 0 1 23 45678910 11 12 13 14 15 16 17 18 19 t RP pr e c h a r g e Al l Ban ks EM R S MR S Dl l R e s e t t RP pr ech a r g e Al l B a n k s 1s t A ut o Re f r e s h t RF C 2nd A ut o Re f r e s h t RF C Mode Regi ster Set An y C om m and m i n . 20 0 C y c l e P ower up & I ni t i al i z a t i on S eq uenc e |
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