IRF9910PBF datasheet(4/10 Pages) IRF

Part #	IRF9910PBF

Description	HEXFET짰Power MOSFET

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Manufacturer	IRF [International Rectifier]

Direct Link	http://www.irf.com

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IRF9910PbF

4

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Fig 7. Typical Capacitance Vs.Drain-to-Source Voltage

Fig 8. Typical Capacitance Vs.Drain-to-Source Voltage

Fig 11. Maximum Safe Operating Area

Fig. 9. Gate-to-Source Voltage vs Typical Gate Charge

Fig. 10. Gate-to-Source Voltage vs Typical Gate Charge

Fig 12. Maximum Safe Operating Area

Typical Characteristics

Q1 - Control FET

Q2 - Synchronous FET

1

10

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

100000

VGS = 0V,

f = 1 MHZ

C

iss

= C

gs

+ C

gd

, C

ds

SHORTED

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

C

oss

C

rss

C

iss

0

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

1msec

10msec

OPERATION IN THIS AREA LIMITED

BY R

DS

(on)

100µsec

T

A

= 25°C

Tj = 150°C

Single Pulse

0

5

10

15

20

QG Total Gate Charge (nC)

0.0

1.0

2.0

3.0

4.0

5.0

6.0

V

DS

= 16V

V

DS

= 10V

I

D

= 9.8A

1

10

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

VGS = 0V,

f = 1 MHZ

C

iss

= C

gs

+ C

gd

, C

ds

SHORTED

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

C

oss

C

rss

C

iss

012345 6789 10

QG Total Gate Charge (nC)

0.0

1.0

2.0

3.0

4.0

5.0

6.0

V

DS

= 16V

V

DS

= 10V

I

D

= 8.3A

0

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

1msec

10msec

OPERATION IN THIS AREA LIMITED

BY R

DS

(on)

100µsec

T

A

= 25°C

Tj = 150°C

Single Pulse

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