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Host

SN65HVD08

Power Bus and Return Resistance

Isolation

Barrier

Remote

(One of n Shown)

5 V Power

Direct

Connection

to Host

5 V Return

PACKAGE DISSIPATION RATINGS

ABSOLUTE MAXIMUM RATINGS

SN75HVD08, SN65HVD08

SLLS550C – NOVEMBER 2002 – REVISED JULY 2006

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ORDERING INFORMATION

SPECIFIED TEMPERATURE

PART NUMBER

PACKAGE

PACKAGE MARKING

RANGE

SN65HVD08D

–40°C to 85°C

SOIC

VP08

SN65HVD08P

–40°C to 85°C

PDIP

65HVD08

SN75HVD08D

0°C to 70°C

SOIC

VN08

SN75HVD08P

0°C to 70°C

PDIP

75HVD08

PACKAGE

SOIC (D)

710 mW

5.7 mW/°C

369 mW

PDIP (P)

1000 mW

8 mW/°C

520 mW

UNIT

-0.3 V to 6 V

Voltage range at A or B

-9 V to 14 V

Input voltage range at D, DE, R or RE

Voltage input range, transient pulse, A and B, through 100

Ω

-25 V to 25 V

–11 mA to 11 mA

A, B, and GND

16 kV

Electrostatic discharge

All pins

4 kV

All pins

1 kV

Continuous total power dissipation

See Dissipation Rating Table

(1)

Stresses beyond those listed under "absolute maximum ratings” may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating

conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values, except differential I/O bus voltages, are with respect to network ground terminal.

(3)

Tested in accordance with JEDEC Standard 22, Test Method A114-A.

(4)

Tested in accordance with JEDEC Standard 22, Test Method C101.

2

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