Electronic Components Datasheet Search |
|
BUZ102SE3045 Datasheet(PDF) 4 Page - Infineon Technologies AG |
|
BUZ102SE3045 Datasheet(HTML) 4 Page - Infineon Technologies AG |
4 / 8 page BUZ 102S Data Book 4 05.99 Electrical Characteristics, at Tj = 25 ˚C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Gate to source charge VDD = 40 V, ID = 52 A 12 nC 8 Qgs - - 23 Qgd Gate to drain charge VDD = 40 V, ID = 52 A 34.5 Gate charge total VDD = 40 V, ID = 52 A, VGS = 0 to 10 V - 45 70 Qg Gate plateau voltage VDD = 40 V, ID = 52 A V(plateau) 5.9 - V - Reverse Diode Inverse diode continuous forward current TC = 25 ˚C IS - - 52 A Inverse diode direct current,pulsed TC = 25 ˚C ISM - - 208 Inverse diode forward voltage VGS = 0 V, IF = 104 A VSD - 1.2 V 1.7 Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/µs trr - 70 ns 105 Reverse recovery charge VR = 30 V, IF=lS , diF/dt = 100 A/µs Qrr - µC 0.15 0.25 |
Similar Part No. - BUZ102SE3045 |
|
Similar Description - BUZ102SE3045 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |