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IRG4PC30FDPBF Datasheet(PDF) 5 Page - International Rectifier

Part # IRG4PC30FDPBF
Description  INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack 1GBT
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRG4PC30FDPBF Datasheet(HTML) 5 Page - International Rectifier

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IRG4PC30FDPbF
www.irf.com
5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
0.1
1
10
-60
-40 -20
0
20
40
60
80
100 120 140 160
A
T , Junction Temperature (°C)
J
I
= 8.5A
I
= 17A
I
= 34A
R
= 23 Ω
V
= 15V
V
= 480V
G
GE
CC
C
C
C
1.80
1.90
2.00
2.10
2.20
0
20406080
A
R , Gate Resistance ( Ω)
G
V
= 480V
V
= 15V
T
= 25°C
I
= 17A
CC
GE
J
C
0
400
800
1200
1600
2000
1
10
100
CE
V , Collector-to-Emitter Voltage (V)
A
Cies
Cres
Coes
VGE = 0V
f = 1 MHz
Cies = Cge + Cgc + Cce
SHORTED
Cres = Cce
Coes = Cce + Cgc
0
4
8
12
16
20
0
102030405060
g
Q , Total Gate Charge (nC)
A
V
= 400V
I
= 17A
CE
C


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