DN2470

Features

High input impedance

Low input capacitance

Fast switching speeds

Low on resistance

Free from secondary breakdown

Low input and output leakage

Applications

Normally-on switches

Solid state relays

Converters

Linear amplifiers

Constant current sources

Battery operated systems

Telecom

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General Description

The DN2470 is a low threshold depletion-mode (normally-on)

transistor utilizing an advanced vertical DMOS structure and

Supertex’s well-proven silicon-gate manufacturing process.

This combination produces a device with the power handling

capabilities of bipolar transistors and with the high input

impedance and positive temperature coefficient inherent

in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FET is ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

Absolute Maximum Ratings

Parameter

Value

Drain-to-source voltage

BV

DSX

Drain-to-gate voltage

BV

DGX

Gate-to-source voltage

±20V

Operating and storage

temperature

Soldering temperature*

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

*Distance of 1.6mm from case for 10 seconds.

Ordering Information

BV

R

I

Package Options

TO-252 (D-PAK)

700V

42Ω

500mA

DN2470K4-G

N-Channel Depletion-Mode Vertical DMOS FET

Package Option

TO-252 (D-PAK)

(top view)

Drain

Gate

Source