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DN2470 Datasheet(PDF) 1 Page - Supertex, Inc |
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DN2470 Datasheet(HTML) 1 Page - Supertex, Inc |
1 / 3 page DN2470 Features High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage Applications Normally-on switches Solid state relays Converters Linear amplifiers Constant current sources Battery operated systems Telecom ► ► ► ► ► ► ► ► ► ► ► ► ► General Description The DN2470 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FET is ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Absolute Maximum Ratings Parameter Value Drain-to-source voltage BV DSX Drain-to-gate voltage BV DGX Gate-to-source voltage ±20V Operating and storage temperature -55OC to +150OC Soldering temperature* 300OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. *Distance of 1.6mm from case for 10 seconds. Ordering Information BV DSX/BVDGX R DS(ON) (max) I DSS(min) Package Options TO-252 (D-PAK) 700V 42Ω 500mA DN2470K4-G N-Channel Depletion-Mode Vertical DMOS FET Package Option TO-252 (D-PAK) (top view) Drain Gate Source |
Similar Part No. - DN2470_07 |
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Similar Description - DN2470_07 |
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