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DN2624 Datasheet(PDF) 2 Page - Supertex, Inc |
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DN2624 Datasheet(HTML) 2 Page - Supertex, Inc |
2 / 4 page 8-10 90% 10% 90% 90% 10% 10% PULSE GENERATOR V DD R L OUTPUT D.U.T. t (ON) t d(ON) t (OFF) t d(OFF) t F t r INPUT INPUT OUTPUT 0V V DD R gen 0V -10V Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja I DR*IDRM @ TC = 25°C °C/W °C/W TO-92 300mA 1.0A 1.0W 125 170 300mA 1.0A * I D (continuous) is limited by max rated Tj. DN2624 Thermal Characteristics Symbol Parameter Min Typ Max Unit Conditions BVDSX Drain-to-Source 240 V VGS = -5V, ID = 100µA Breakdown Voltage VGS(OFF) Gate-to-Source OFF Voltage –1 –3 V VDS = 25V, ID= 10µA ∆VGS(OFF) Change in V GS(OFF) with Temperature 4.5 mV V DS = 25V, ID= 10µA IGSS Gate Body Leakage Current 100 nA VGS = ± 20V, VDS = 0V ID(OFF) Drain-to-Source Leakage Current 10 µAVGS = -10V, VDS = Max Rating 1mA V GS = -10V, VDS = 0.8 Max Rating TA = 125°C I DSS Saturated Drain-to-Source Current 600 mA V GS = 0V, VDS = 25V RDS(ON) Static Drain-to-Source 4.0 Ω VGS = 0V, ID = 200mA ON-State Resistance ∆RDS(ON) Change in RDS(ON) with Temperature 1.1 %/°CVGS = 0V, ID = 200mA GFS Forward Transconductance 400 mhos ID = 300mA, VDS = 10V C ISS Input Capacitance 720 V GS = -10V, VDS = 25V COSS Common Source Output Capacitance 100 pF f = 1 MHz C RSS Reverse Transfer Capacitance 30 t d(ON) Turn-ON Delay Time 15 30 V DD = 25V, tr Rise Time 22 44 ns ID = 200mA, t d(OFF) Turn-OFF Delay Time 22 44 R GEN = 10Ω t f Fall Time 30 60 VSD Diode Forward Voltage Drop 1.8 V VGS = -10V, ISD = 200mA t rr Reverse Recovery Time 600 ns V GS = -10V, ISD = 1A Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Electrical Characteristics (@ 25°C unless otherwise specified) Switching Waveforms and Test Circuit – OBSOLETE – |
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