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TIP121 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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TIP121 Datasheet(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page TIP120 ... TIP122 TIP120 ... TIP122 NPN Si-Epitaxial Planar Darlington Power Transistors Si-Epitaxial Planar Darlington-Leistungs-Transistoren NPN Version 2006-10-17 Dimensions - Maße [mm] 1 = B 2/4 = C 3 = E Max. power dissipation with cooling Max. Verlustleistung mit Kühlung 65 W Collector current Kollektorstrom 5 A Plastic case Kunststoffgehäuse TO-220AB Weight approx. Gewicht ca. 2.2 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) TIP120 TIP121 TIP122 Collector-Emitter-volt. – Kollektor-Emitter-Spg. B open VCEO 60 V 80 V 100 V Collector-Base-voltage – Kollektor-Basis-Spg. E open VCBO 60 V 80 V 100 V Emitter-Base-voltage – Emitter-Basis-Spannung C open VEBO 5 V Power dissipation – Verlustleistung without cooling – ohne Kühlung with cooling – mit Kühlung TA = 25°C TC = 25°C Ptot Ptot 2 W 1) 65 W Collector current – Kollektorstrom (dc) IC 5 A Peak Collector current – Kollektor-Spitzenstrom ICM 8 A Base current – Basisstrom (dc) IB 120 mA Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -55...+150°C -55…+150°C Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. DC current gain – Kollektor-Basis-Stromverhältnis 2) IC = 0.5 A, VCE = 3 V IC = 3 A, VCE = 3 V hFE hFE 1000 1000 – – – – Small signal current gain – Kleinsignal-Stromverstärkung IC = 3 A, VCE = 4 V, f = 1 MHz hfe 4 1 Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gültig wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden 2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2% © Diotec Semiconductor AG http://www.diotec.com/ 1 3.8 2.54 0.9 1.5 10±0.2 4 3 2 1 Type Typ |
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