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Doc.# DSFP-TN1504/TN1506/TN1510

062706

TN1504/TN1506/TN1510

Symbol

Parameter

Min

Typ

Max

Units

Conditions

Switching Waveforms and Test Circuit

BV

DSS

Drain-to-source break-

down voltage

TN1504

40

--

V

V

TN1506

60

TN1510

100

V

GS(th)

Gate threshold voltage

0.6

-

2.0

V

V

∆V

GS(th)

Change in V

-

-3.8

-5.0

V

I

GSS

Gate body leakage

-

0.1

100

nA

V

I

DSS

Zero gate voltage drain current

--

10

μA

V

V

T

500

I

D(ON)

ON-state drain current

-

1.4

-

A

V

-3.4

-

V

R

DS(ON)

Static drain-to-source ON-state

resistance

-

2.0

4.5

Ω

V

-

1.6

3.0

V

∆R

DS(ON)

Change in R

-

0.6

1.1

V

G

FS

Forward transconductance

225

400

-

mmho

V

C

ISS

Input capacitance

-50

60

pF

V

f = 1 MHz

C

OSS

Common source output capacitance

-25

35

C

RSS

Reverse transfer capacitance

-

4.0

8.05

t

d(ON)

Turn-ON delay time

-

2.0

5.0

ns

V

R

t

r

Rise time

-

3.0

5.0

t

d(OFF)

Turn-OFF delay time

-

6.0

7.0

t

f

Fall time

-

3.0

6.0

V

SD

Diode forward voltage drop

-

1.0

1.5

V

V

t

rr

Reverse recovery time

-

400

-

ns

V

90%

10%

90%

90%

10%

10%

PULSE

GENERATOR

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

INPUT

OUTPUT

10V

V

DD

0V

0V

Notes:

1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.