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TN1510NW Datasheet(PDF) 2 Page - Supertex, Inc |
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TN1510NW Datasheet(HTML) 2 Page - Supertex, Inc |
2 / 2 page 2 Doc.# DSFP-TN1504/TN1506/TN1510 062706 TN1504/TN1506/TN1510 Symbol Parameter Min Typ Max Units Conditions Electrical Characteristics (@25OC unless otherwise specified) Switching Waveforms and Test Circuit BV DSS Drain-to-source break- down voltage TN1504 40 -- V V GS= 0V, ID = 1.0mA TN1506 60 TN1510 100 V GS(th) Gate threshold voltage 0.6 - 2.0 V V GS = VDS, ID = 0.5mA ∆V GS(th) Change in V GS(th) with temperature - -3.8 -5.0 mV/OC V GS = VDS, ID = 1.0mA I GSS Gate body leakage - 0.1 100 nA V GS = ±20V, VDS = 0V I DSS Zero gate voltage drain current -- 10 μA V GS =0V, VDS = Max Rating V GS = 0V, VDS = 0.8 Max Rating T A = 125 OC 500 I D(ON) ON-state drain current - 1.4 - A V GS = 5V, VDS = 25V -3.4 - V GS = 10V, VDS = 25V R DS(ON) Static drain-to-source ON-state resistance - 2.0 4.5 Ω V GS = 4.5V, ID = 250mA - 1.6 3.0 V GS = 10V, ID = 500mA ∆R DS(ON) Change in R DS(ON) with temperature - 0.6 1.1 %/OC V GS = 10V, ID = 0.5A G FS Forward transconductance 225 400 - mmho V DS = 25V, ID = 500mA C ISS Input capacitance -50 60 pF V GS = 0V, VDS = 25V f = 1 MHz C OSS Common source output capacitance -25 35 C RSS Reverse transfer capacitance - 4.0 8.05 t d(ON) Turn-ON delay time - 2.0 5.0 ns V DD = 25V, ID = 1.0A R GEN = 25Ω t r Rise time - 3.0 5.0 t d(OFF) Turn-OFF delay time - 6.0 7.0 t f Fall time - 3.0 6.0 V SD Diode forward voltage drop - 1.0 1.5 V V GS = 0V, ISD = 0.5A t rr Reverse recovery time - 400 - ns V GS = 0V, ISD = 0.5A 90% 10% 90% 90% 10% 10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t (ON) t d(ON) t (OFF) t d(OFF) t F t r INPUT INPUT OUTPUT 10V V DD RGEN 0V 0V Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. |
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