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IS42S16100C1-7TI Datasheet(PDF) 5 Page - Integrated Silicon Solution, Inc

Part # IS42S16100C1-7TI
Description  512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS42S16100C1-7TI Datasheet(HTML) 5 Page - Integrated Silicon Solution, Inc

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IS42S16100C1
ISSI®
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
5
Rev. D
11/03/06
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameters
Rating
Unit
VDD MAX
Maximum Supply Voltage
–1.0 to +4.6
V
VDDQ MAX
Maximum Supply Voltage for Output Buffer
–1.0 to +4.6
V
VIN
Input Voltage
–1.0 to +4.6
V
VOUT
Output Voltage
–1.0 to +4.6
V
PD MAX
Allowable Power Dissipation
1
W
ICS
Output Shorted Current
50
mA
TOPR
Operating Temperature
Com
0 to +70
°C
Ind.
-40 to +85
°C
TSTG
Storage Temperature
–55 to +150
°C
DC RECOMMENDED OPERATING CONDITIONS(2) (At TA = 0 to +70°C)
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD, VDDQ
Supply Voltage
3.0
3.3
3.6
V
VIH
Input High Voltage(3)
2.0
VDD + 0.3
V
VIL
Input Low Voltage(4)
-0.3
+0.8
V
CAPACITANCE CHARACTERISTICS(1,2) (At TA = 0 to +25°C, VDD = VDDQ = 3.3 ± 0.3V, f = 1 MHz)
Symbol
Parameter
Typ.
Max.
Unit
CIN1
Input Capacitance: A0-A11
4
pF
CIN2
Input Capacitance: (CLK, CKE,
CS, RAS, CAS, WE, LDQM, UDQM)
4
pF
CI/O
Data Input/Output Capacitance: DQ0-DQ15
5
pF
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This
is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. All voltages are referenced to GND.
3. VIH (max) = VDDQ + 2.0V with a pulse width
≤ 3 ns.


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