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CM1400DU-24NF Datasheet(PDF) 2 Page - Powerex Power Semiconductors |
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CM1400DU-24NF Datasheet(HTML) 2 Page - Powerex Power Semiconductors |
2 / 4 page 2 CM1400DU-24NF Mega Power Dual™ IGBTMOD 1400 Amperes/1200 Volts Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Symbol CM1400DU-24NF Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts Collector Current (TC = 25°C) IC 1400 Amperes Peak Collector Current (Tj ≤ 150°C) ICM 2800* Amperes Emitter Current (TC = 25°C)** IE 1400 Amperes Peak Emitter Current** IEM 2800* Amperes Maximum Collector Dissipation (Tj < 150°C) (TC' = 25°C) PC 8920 Watts Mounting Torque, M6 Mounting Screws – 40 in-lb Mounting Torque, M6 Main Terminal Screw – 40 in-lb Weight (Typical) – 1400 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Volts Static Electrical Characteristics, Tj = 25 C°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 140mA, VCE = 10V 6 7 8 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 1400A, VGE = 15V, Tj = 25°C– 1.9 2.5 Volts (Without Lead Resistance) (Chip) IC = 1400A, VGE = 15V, Tj = 125°C– 2.1 – Volts Module Lead Resistance R(lead) IC = 1400A, Terminal-chip – 0.143 – m Ω Total Gate Charge QG VCC = 600V, IC = 1400A, VGE = 15V – 7200 – nC Emitter-Collector Voltage** VEC IE = 1400A, VGE = 0V – – 3.4 Volts Dynamic Electrical Characteristics, Tj = 25 C°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies –– 220 nF Output Capacitance Coes VCE = 10V, VGE = 0V – – 25 nF Reverse Transfer Capacitance Cres –– 4.7 nF Inductive Turn-on Delay Time td(on) VCC = 600V, – – 400 ns Load Rise Time tr IC = 1400A, IE = 1400A, – – 300 ns Switch Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, – – 1000 ns Times Fall Time tf RG = 1.0 ,– – 300 ns Diode Reverse Recovery Time** trr Inductive Load – – 800 ns Diode Reverse Recovery Charge** Qrr Switching Operation – 100 – µC * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 |
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