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T436416D Datasheet(PDF) 1 Page - Taiwan Memory Technology |
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T436416D Datasheet(HTML) 1 Page - Taiwan Memory Technology |
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1 / 73 page  TE CH tm T436416D TM Technology Inc. reserves the right P. 1 Publication Date: FEB. 2007 to change products or specifications without notice. Revision: A SDRAM 4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM FEATURES •••• Fast access time from clock: 4.5/5/5.4 ns •••• Fast clock rate: 200/166/143 MHz •••• Fully synchronous operation •••• Internal pipelined architecture •••• 1M word x 16-bit x 4-bank •••• Programmable Mode registers - CAS# Latency: 2, or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: interleaved or linear burst - Burst stop function •••• Auto Refresh and Self Refresh •••• 4096 refresh cycles/64ms •••• CKE power down mode •••• Single +3.3V ± 0.3V power supply •••• Interface: LVTTL •••• 54-pin 400 mil plastic TSOP II package • 60-Ball, 6.4 mm x 10.1 mm TFBGA package Key Specifications T436416D - 5/6/7 tCK3 Clock Cycle time(min.) 5/6/7 ns tAC3 Access time from CLK(max.) 4.5/5/5.4/ ns tRAS Row Active time(min.) 35/42/45 ns tRC Row Cycle time(min.) 50/60/63 ns ORDERING INFORMATION Part Number Frequency Package T436416D-5S/-5C 200MHz TSOP II / TFBGA T436416D-5SG/-5CG 200MHz TSOP II / TFBGA T436416D-6S/-6C 166MHz TSOP II / TFBGA T436416D-6SG/-6CG 166MHz TSOP II / TFBGA T436416D-7S/-7C 143MHz TSOP II / TFBGA T436416D-7SG/-7CG 143MHz TSOP II / TFBGA S : indicates TSOPII Package, C : indicates TFBGA Package, G : indicates Pb Free Package GRNERAL DESCRIPTION The T436416D SDRAM is a high-speed CMOS synchronous DRAM containing 64 Mbits. It is internally configured as 4 Banks of 1M word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. The T436416D provides for programmable Read or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh functions, either Auto or Self Refresh are easy to use. By having a programmable mode register, the system can choose the most suitable modes to maximize its performance. These devices are well suited for applications requiring high memory bandwidth and particularly well suited to high performance PC applications. |
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