3

CM150TJ-12F

Trench Gate Design Six IGBTMOD™

150 Amperes/600 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Input Capacitance

––

41

nf

Output Capacitance

–

–

2.7

nf

Reverse Transfer Capacitance

––

1.5

nf

Inductive

Turn-on Delay Time

–

–

120

ns

Load

Rise Time

–

–

100

ns

Switch

Turn-off Delay Time

–

–

350

ns

Times

Fall Time

–

250

ns

Diode Reverse Recovery Time**

Inductive Load

–

–

150

ns

Diode Reverse Recovery Charge**

Switching Operation

–

2.8

–

µC

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Thermal Resistance, Junction to Case

–

–

0.31

°C/W

Point per Outline Drawing

Thermal Resistance, Junction to Case

–

–

0.47

°C/W

Point per Outline drawing

Thermal Resistance, Junction to Case

Per IGBT 1/6 Module,

–

0.19

–

°C/W

Thermal Resistance, Junction to Case

Rth(j-c)'D

–

0.25

–

°C/W

Contact Thermal Resistance

Per Module, Thermal Grease Applied

–

0.13

–

°C/W

** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).