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BQ24316DSG Datasheet(PDF) 3 Page - Texas Instruments |
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BQ24316DSG Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 25 page  www.ti.com ELECTRICAL CHARACTERISTICS bq24314 bq24316 SLUS763C – JULY 2007 – REVISED OCTOBER 2007 over junction temperature range 0 °C ≤ T J ≤ 125°C and recommended supply voltage (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT IN Under-voltage lock-out, input VUVLO CE = Low, VIN increasing from 0V to 3V 2.6 2.7 2.8 V power detected threshold VHYS-UVLO Hysteresis on UVLO CE = Low, VIN decreasing from 3V to 0V 200 260 300 mV Deglitch time, input power CE = Low. Time measured from VIN 0V → 5V 1μs rise-time, TDGL(PGOOD) 8 ms detected status to output turning ON CE = Low, No load on OUT pin, IDD Operating current 400 600 μA VIN = 5V, RILIM = 25kΩ ISTDBY Standby current CE = High, VIN = 5.0V 65 95 μA INPUT TO OUTPUT CHARACTERISTICS VDO Drop-out voltage IN to OUT CE = Low, VIN = 5V, IOUT = 1A 170 280 mV INPUT OVERVOLTAGE PROTECTION Input overvoltage bq24314 5.71 5.85 6.00 V VOVP protection CE = Low, VIN increasing from 5V to 7.5V bq24316 6.60 6.80 7.00 V threshold tPD(OVP) Input OV propagation delay(1) CE = Low 1 μs VHYS-OVP Hysteresis on OVP CE = Low, VIN decreasing from 7.5V to 5V 25 60 110 mV Recovery time from input CE = Low, Time measured from tON(OVP) 8 ms overvoltage condition VIN 7.5V → 5V, 1μs fall-time INPUT OVERCURRENT PROTECTION Input overcurrent protection IOCP 300 1500 mA threshold range Input overcurrent protection CE = Low, RILIM = 25kΩ IOCP 930 1000 1070 mA threshold Blanking time, input overcurrent tBLANK(OCP) 176 μs detected Recovery time from input tREC(OCP) 64 ms overcurrent condition BATTERY OVERVOLTAGE PROTECTION Battery overvoltage protection CE = Low, VIN > 4.4V BVOVP 4.30 4.35 4.4 V threshold VHYS-BOVP Hysteresis on BVOVP CE = Low, VIN > 4.4V 200 275 320 mV DSG VBAT = 4.4V, TJ = 25°C 10 Package Input bias current IVBAT nA on VBAT pin DSJ VBAT = 4.4V, TJ = 85°C 10 Package Deglitch time, battery overvoltage CE = Low, VIN > 4.4V. Time measured from VVBAT rising from TDGL(BOVP) 176 μs detected 4.1V to 4.4V to FAULT going low. THERMAL PROTECTION TJ(OFF) Thermal shutdown temperature 140 150 °C TJ(OFF-HYS) Thermal shutdown hysteresis 20 °C LOGIC LEVELS ON CE VIL Low-level input voltage 0 0.4 V VIH High-level input voltage 1.4 V IIL Low-level input current VCE = 0V 1 μA IIH High-level input current VCE = 1.8V 15 μA LOGIC LEVELS ON FAULT VOL Output low voltage ISINK = 5mA 0.2 V IHI-Z Leakage current, FAULT pin HI-Z VFAULT = 5V 10 μA (1) Not tested in production. Specified by design. Copyright © 2007, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): bq24314 bq24316 |
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