3

CM200DU-24F

Trench Gate Design Dual IGBTMOD™

200 Amperes/1200 Volts

Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Input Capacitance

––

78

nf

Output Capacitance

–

–

3.4

nf

Reverse Transfer Capacitance

––

2

nf

Inductive

Turn-on Delay Time

–

–

300

ns

Load

Rise Time

–

–

80

ns

Switch

Turn-off Delay Time

–

500

ns

Times

Fall Time

Inductive Load

–

–

300

ns

Diode Reverse Recovery Time**

Switching Operation

–

–

200

ns

Diode Reverse Recovery Charge**

–

12.2

–

µC

Characteristics

Symbol

Test Conditions

Min.

Typ.

Max.

Units

Thermal Resistance, Junction to Case

–

0.15

°C/W

Point per Outline Drawing

Thermal Resistance, Junction to Case

–

–

0.18

°C/W

Point per Outline Drawing

Thermal Resistance, Junction to Case

Per IGBT 1/2 Module,

–

0.08

°C/W

Contact Thermal Resistance

Per Module, Thermal Grease Applied

–

0.020

–

°C/W

** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).