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FMB857B Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part # FMB857B
Description  PNP Epitaxial Silicon Transistor
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FMB857B Datasheet(HTML) 1 Page - Fairchild Semiconductor

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© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FMB857B Rev. 1.0.0
1
September 2007
FMB857B
PNP Epitaxial Silicon Transistor
• This device is designed for general purpose amplifier application at collector currents to 300mA.
• Sourced from process 68.
Absolute Maximum Ratings T
C=25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics T
a=25°C unless otherwise noted
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
Electrical Characteristics T
C=25°C unless otherwise noted
NOTES: All voltages (V) and currents (A) are negative polarity for PNP transistors.
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
45
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
500
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ 150
°C
Symbol
Parameter
Max.
Units
PD
Total Device Dissipation
Derate above 25
°C
700
5.6
mW
mW/
°C
RθJA
Thermal Resistance, Junction to Ambient
180
°C/W
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC = 10μA
50
V
BVCEO
Collector-Emitter Breakdown Voltage
IC = 1mA
45
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 10μA
5
V
BVCEX
Collector-Emitter Cutoff Voltage
IC = 10μA, VBE = 1V
50
nA
ICBO
Collector Cut-off Current
VCB = 30V, T = 25°C
T =150
°C
15
4000
nA
hFE
DC Current Gain
VCE = 5V, IC = 2mA
220
475
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
0.3
0.65
V
VBE(on)
Base-Emitter On Voltage
VCE = 5V, IC = 2mA
VCE = 5V, IC = 10mA
0.6
0.75
0.82
V
E1
B1
E2
B2
C2
C1
pin #1
SSOT-6
Mark: .N2
Dot denotes pin #1


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