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IRG4CC10KB Datasheet(PDF) 1 Page - International Rectifier |
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IRG4CC10KB Datasheet(HTML) 1 Page - International Rectifier |
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1 / 1 page IRG4CC10KB IRG4CC10KB IGBT Die in Wafer Form 600 V Size 1 Ultra-Fast Speed Short Circuit Rated 6" Wafer 12\4\98 Nominal Backmetal Composition, Thickness: Cr-NiV-Ag (1 kA-2kA-2.5kA ) Nominal Front Metal Composition, Thickness: 99% Al, 1% Si (4 microns) Dimensions: .080" x .120" Wafer Diameter: 150mm, with std. < 100 > flat Wafer thickness: .015" + / -.003" Relevant Die Mechanical Dwg. Number 01-5274 Minimum Street Width 100 Microns Reject Ink Dot Size 0.25mm Diameter Minimum Ink Dot Location Consistent throughout same wafer lot Recommended Storage Environment: Store in original container, in dessicated nitrogen, with no contamination Recommended Die Attach Conditions For optimum electrical results, die attach temperature should not exceed 300C Mechanical Data Die Outline Reference Standard IR packaged part ( for design ) : IRG4BC10K Parameter Description Guaranteed (Min/Max) Test Conditions VCE (on) Collector-to-Emitter Saturation Voltage 4.5V Max. IC = 1.5A, TJ = 25°C, VGE = 15V V(BR)CES Colletor-to-Emitter Breakdown Voltage 600V Min. TJ = 25°C, ICES = 250µA, VGE = 0V VGE(th) Gate Threshold Voltage 3.0V Min., 6.5V Max. VGE = VCE , TJ =25°C, IC =250µA ICES Zero Gate Voltage Collector Current 250µA Max. TJ = 25°C, VCE = 600V IGES Gate-to-Emitter Leakage Current ± 1.1µA Max. TJ = 25°C, VGE = +/- 20V Electrical Characteristics ( Wafer Form ) E C G PD- 91825 www.irf.com |
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