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CM400HU-24H Datasheet(PDF) 2 Page - Powerex Power Semiconductors |
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CM400HU-24H Datasheet(HTML) 2 Page - Powerex Power Semiconductors |
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2 / 4 page  8 CM400HU-24H Single IGBTMOD™ U-Series Module 400 Amperes/1200 Volts Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Symbol CM400HU-24H Units Junction Temperature Tj -40 to 150 °C Storage Temperature Tstg -40 to 125 °C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage (C-E SHORT) VGES ±20 Volts Collector Current (Tc = 25°C) IC 400 Amperes Peak Collector Current (Tj ≤ 25°C) ICM 800* Amperes Emitter Current** (Tc = 25°C) IE 400 Amperes Peak Emitter Current** IEM 800* Amperes Maximum Collector Dissipation (Tc = 25°C) Pc 2100 Watts Mounting Torque, M6 Main Terminal, M6 Mounting – 40 in-lb Mounting Torque, M4 Terminal – 15 in-lb Weight – 450 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 2 mA Gate Leakage Voltage IGES VGE = VGES, VCE = 0V – – 0.5 µA Gate-Emitter Threshold Voltage VGE(th) IC = 40mA, VCE = 10V 4.5 6 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 400A, VGE = 15V, Tj = 25°C – 2.9 3.7 Volts IC = 400A, VGE = 15V, Tj = 125°C – 2.85 – Volts Total Gate Charge QG VCC = 600V, IC = 400A, VGE = 15V – 1500 – nC Emitter-Collector Voltage* VEC IE = 400A, VGE = 0V – – 3.2 Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Input Capacitance Cies –– 60 nf Output Capacitance Coes VCE = 10V, VGE = 0V – – 21 nf Reverse Transfer Capacitance Cres –– 12 nf Resistive Turn-on Delay Time td(on) VCC = 600V, IC = 400A, – – 250 ns Load Rise Time tr VGE1 = VGE2 = 15V, – – 350 ns Switch Turn-off Delay Time td(off) RG = 0.78 , Resistive – – 350 ns Times Fall Time tf Load Switching Operation – – 350 ns Diode Reverse Recovery Time trr IE = 400A, diE/dt = -800A/µs– – 300 ns Diode Reverse Recovery Charge Qrr IE = 400A, diE/dt = -800A/µs – 2.2 – µC Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT Module – – 0.06 °C/W Thermal Resistance, Junction to Case Rth(j-c)D Per FWDi Module – – 0.09 °C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – 0.02 – °C/W 8 |
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