BU508DFI datasheet(2/6 Pages) STMICROELECTRONICS

Part #	BU508DFI

Description	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

Rthj-case

Thermal Resistance Junction-case

Max

2.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 1500 V

Tj = 125

oC

1

2

mA

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

300

mA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 100 m A

700

V

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 4.5 A

IB = 2 A

1

V

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 4.5 A

IB = 2 A

1.3

V

ts

tf

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 4.5 A

hFE = 2.5

VCC = 140 V

LC = 0.9 mH

LB = 3

µH

(see figure 1)

7

550

µs

ns

VF

Diode Forward Voltage

IF = 4 A

2

V

fT

Transition Frequency

IC = 0.1 A

VCE = 5 V

f = 5 MHz

7

MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area

Thermal Impedance

BU508DFI

2/6

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