IS63LV1024-12T datasheet(3/18 Pages) ISSI

Part #	IS63LV1024-12T

Description	128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

3

Rev. I

1/26/07

IS63LV1024

IS63LV1024L

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

Parameter

Value

Unit

VTERM

Terminal Voltage with Respect to GND

–0.5 to VDD + 0.5

V

TSTG

Storage Temperature

–65 to +150

°C

PT

Power Dissipation

1.0

W

Notes:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect

reliability.

TRUTH TABLE

Mode

WE

CE

OE

I/O Operation

VDD Current

Not Selected

X

H

X

High-Z

ISB1, ISB2

(Power-down)

Output Disabled

H

L

H

High-Z

ICC1, ICC2

Read

H

L

DOUT

ICC1, ICC2

Write

L

X

DIN

ICC1, ICC2

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter

Test Conditions

Min.

Max.

Unit

VOH

Output HIGH Voltage

VDD = Min., IOH = –4.0 mA

2.4

—

V

VOL

Output LOW Voltage

VDD = Min., IOL = 8.0 mA

—

0.4

V

VIH

Input HIGH Voltage

2.2

VDD + 0.3

V

VIL

Input LOW Voltage(1)

–0.3

0.8

V

ILI

Input Leakage

GND

≤ VIN ≤ VDD

Com.

–1

1

µA

Ind.

–5

5

ILO

Output Leakage

GND

≤ VOUT ≤ VDD, Outputs Disabled

Com.

–1

1

µA

Ind.

–5

5

Notes:

1. VIL = –3.0V for pulse width less than 10 ns.

OPERATING RANGE

Range

Ambient Temperature

VDD

Commercial

0°C to +70°C

3.3V ± 0.3V

Industrial

–40°C to +85°C

3.3V ± 0.15V

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