TIP41A datasheet(1/1 Pages) TEL

Part #	TIP41A

Description	Plastic-Encapsulated Transistors

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Manufacturer	TEL [TRANSYS Electronics Limited]

Direct Link	http://www.transyselectronics.com

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TO-220 Plastic-Encapsulate

d Transistors

TIP41A/41B/41C

TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM:

2

W (Tamb=25

℃)

Collector current

ICM:

6

A

Collector-base voltage

V(BR)CBO: TIP41A : 60

V

TIP41B : 80

V

TIP41C : 100 V

Operating and storage junction temperature range

TJ, Tstg: -55

℃ to +150℃

ELECTRICAL

CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

41A

Collector-base breakdown voltage

41B

41C

V(BR)CBO

Ic= 1mA, IE=0

60

80

100

V

41A

Collector-emitter breakdown voltage

41B

41C

V(BR)CEO

Ic= 30mA, IB=0

60

80

100

V

Emitter-base breakdown voltage

V(BR)EBO

IE= 1mA, IC=0

5

V

41A

Collector cut-off current

41B

41C

ICBO

VCB=60V, IE=0

VCB=80V, IE=0

VCB=100V, IE=0

0.4

mA

41A

Collector cut-off current

41B

41C

ICEO

VCE= 30V, IB= 0

VCE= 60V, IB= 0

0.7

mA

Emitter cut-off current

IEBO

VEB=5V, IC=0

1

mA

hFE(1)

VCE= 4V, IC= 0.3A

30

DC current gain

hFE(2)

VCE=4 V, IC= 3A

15

75

Collector-emitter saturation voltage

VCE(sat)

IC=6A, IB=0.6A

1.5

V

Base-emitter voltage

VBE(on

VCE= 4V, IC=6A

2

V

Transition frequency

fT

VCE=10V , IC=0.5A

f =1MHz

3

MHZ

1 2 3

TO-220

1. BASE

2. COLLECTOR

3. EMITTER

Transys

Electronics

LI M ITE D

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