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BUK7508-40B Datasheet(PDF) 8 Page - NXP Semiconductors |
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BUK7508-40B Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 14 page BUK75_7608-40B_2 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 — 16 November 2007 8 of 14 NXP Semiconductors BUK75/7608-40B N-channel TrenchMOS standard level FET VDS =25V Tj =25 °C; ID =25A Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values. VGS =0V Fig 15. Reverse diode current as a function of reverse diode voltage; typical values VGS (V) 08 6 24 003aac074 50 25 75 100 ID (A) 0 Tj = 175 °C 25 °C QG (nC) 040 30 10 20 003aac072 4 6 2 8 10 VGS (V) 0 VDD = 14 V VDD = 32 V VSD (V) 0.0 1.2 0.9 0.3 0.6 003aac071 50 25 75 100 IS (A) 0 Tj = 175 °C 25 °C |
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