BUK761R8-30C datasheet(5/15 Pages) NXP

Part #	BUK761R8-30C

Description	N-channel TrenchMOS standard level FET

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Manufacturer	NXP [NXP Semiconductors]

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BUK761R8-30C_2

Product data sheet

Rev. 02 — 20 August 2007

5 of 15

NXP Semiconductors

BUK761R8-30C

N-channel TrenchMOS standard level FET

5.

Thermal characteristics

6.

Characteristics

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance

from junction to

ambient

mounted on printed circuit board;

minimum footprint

-50

-

K/W

Rth(j-mb)

thermal resistance

from junction to

mounting base

see Figure 5

-

0.45

K/W

Fig 5.

Transient thermal impedance from junction to mounting base as a function of pulse duration

003aab340

single shot

0.2

0.1

0.05

0.02

10

-3

10

-2

10

-1

1

10

-6

10

-5

10

-4

10

-3

10

-2

10

-1

1

tp (s)

Zth(j-mb)

(K/W)

δ = 0.5

tp

T

P

t

tp

T

δ =

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID =250 μA; VGS =0V;

Tj =25 °C

30

-

V

ID =250 μA; VGS =0V;

Tj =-55 °C

27

-

V

VGSth

gate-source threshold

voltage

ID =1mA; VDS = VGS;

Tj =-55 °C; see Figure 10

--

4.4

V

ID =1mA; VDS = VGS;

Tj = 175 °C; see Figure 11 and

10

1-

-

V

ID =1mA; VDS = VGS; Tj =25 °C;

see Figure 11 and 10

23

4V

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