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BFG93A Datasheet(PDF) 3 Page - NXP Semiconductors

Part # BFG93A
Description  NPN 6 GHz wideband transistors
Download  13 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

BFG93A Datasheet(HTML) 3 Page - NXP Semiconductors

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NXP Semiconductors
Product specification
NPN 6 GHz wideband transistors
BFG93A; BFG93A/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
15
V
VCEO
collector-emitter voltage
open base
12
V
VEBO
emitter-base voltage
open collector
2V
IC
collector current (DC)
35
mA
Ptot
total power dissipation
Ts ≤ 85 °C; note 1
300
mW
Tstg
storage temperature range
−65
+150
°C
Tj
junction operating temperature
175
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
note 1
290
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector leakage current
IE = 0; VCB =5V
−−
50
nA
hFE
DC current gain
IC = 30 mA; VCE = 5 V
40
90
Cc
collector capacitance
IE =ie = 0; VCB =5V; f=1MHz
0.9
pF
Ce
emitter capacitance
IC =ic = 0; VEB =5V; f=1MHz
1.9
pF
Cre
feedback capacitance
IC =ic = 0; VCB =5V; f=1MHz
0.6
pF
fT
transition frequency
IC = 30 mA; VCE = 5 V; f = 500 MHz
4.5
6
GHz
GUM
maximum unilateral power
gain; note 1
IC = 30 mA; VCE =8V; Tamb =25 °C;
f = 1 GHz
16
dB
IC = 30 mA; VCE =8V; Tamb =25 °C;
f = 2 GHz
10
dB
F
noise figure
Γs = Γopt; IC = 5 mA; VCE =8V;
Tamb =25 °C; f = 1 GHz
1.7
dB
Γ
s = Γopt; IC = 5 mA; VCE =8V;
Tamb =25 °C; f = 2 GHz
2.3
dB
G
UM
10
S
21
2
1S
11
2
() 1S
22
2
()
-------------------------------------------------------------- dB.
log
=
Rev. 05 - 26 November 2007
3 of 13


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