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BFG93A Datasheet(PDF) 3 Page - NXP Semiconductors |
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BFG93A Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 13 page NXP Semiconductors Product specification NPN 6 GHz wideband transistors BFG93A; BFG93A/X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS Note 1. Ts is the temperature at the soldering point of the collector pin. CHARACTERISTICS Tj =25 °C unless otherwise specified. Note 1. GUM is the maximum unilateral power gain, assuming S12 is zero and SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 15 V VCEO collector-emitter voltage open base − 12 V VEBO emitter-base voltage open collector − 2V IC collector current (DC) − 35 mA Ptot total power dissipation Ts ≤ 85 °C; note 1 − 300 mW Tstg storage temperature range −65 +150 °C Tj junction operating temperature − 175 °C SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-s thermal resistance from junction to soldering point note 1 290 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT ICBO collector leakage current IE = 0; VCB =5V −− 50 nA hFE DC current gain IC = 30 mA; VCE = 5 V 40 90 − Cc collector capacitance IE =ie = 0; VCB =5V; f=1MHz − 0.9 − pF Ce emitter capacitance IC =ic = 0; VEB =5V; f=1MHz − 1.9 − pF Cre feedback capacitance IC =ic = 0; VCB =5V; f=1MHz − 0.6 − pF fT transition frequency IC = 30 mA; VCE = 5 V; f = 500 MHz 4.5 6 − GHz GUM maximum unilateral power gain; note 1 IC = 30 mA; VCE =8V; Tamb =25 °C; f = 1 GHz − 16 − dB IC = 30 mA; VCE =8V; Tamb =25 °C; f = 2 GHz − 10 − dB F noise figure Γs = Γopt; IC = 5 mA; VCE =8V; Tamb =25 °C; f = 1 GHz − 1.7 − dB Γ s = Γopt; IC = 5 mA; VCE =8V; Tamb =25 °C; f = 2 GHz − 2.3 − dB G UM 10 S 21 2 1S 11 2 – () 1S 22 2 – () -------------------------------------------------------------- dB. log = Rev. 05 - 26 November 2007 3 of 13 |
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