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BFG540 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BFG540 Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 14 page NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFG540; BFG540/X; BFG540/XR Fig.7 Gain as a function of collector current. VCE = 8 V; f = 900 MHz. MSG = maximum stable gain; Gmax = maximum available gain; GUM = maximum unilateral power gain. handbook, halfpage 020 IC (mA) 40 60 25 0 20 15 gain (dB) 10 5 MRA752 GUM Gmax MSG Fig.8 Gain as a function of collector current. VCE = 8 V; f = 2 GHz. Gmax = maximum available gain; GUM = maximum unilateral power gain. handbook, halfpage 020 IC (mA) 40 60 25 0 20 15 gain (dB) 10 5 MRA753 GUM Gmax Fig.9 Gain as a function of frequency. IC = 10 mA; VCE =8V. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. handbook, halfpage 50 gain (dB) 0 10 MRA754 10 2 103 10 4 10 20 30 f (MHz) 40 MSG GUM Gmax Fig.10 Gain as a function of frequency. handbook, halfpage 50 gain (dB) 0 10 MRA755 10 2 103 10 4 10 20 30 f (MHz) 40 MSG GUM Gmax IC = 40 mA; VCE =8V. GUM = maximum unilateral power gain; MSG = maximum stable gain; Gmax = maximum available gain. Rev. 05 - 21 November 2007 6 of 14 |
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Similar Description - BFG540 |
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